Symposium O – Compound Semiconductors for Energy Applications and Environmental Sustainability
Research Article
Crystalline Perfection of Epitaxial Structure: Correlations with Composition, Thickness, and Elastic Strain of Epitaxial Layers
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- 31 January 2011, 1167-O07-04
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InGaP Layers Grown on Different GaAs Surfaces for High Efficiency Solar Cells
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- 31 January 2011, 1167-O03-04
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Hydrogen-related defects in bulk ZnO
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- 31 January 2011, 1167-O07-07
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Growth by Molecular Beam Epitaxy of GaNAs Alloys with High As Content for Potential Photoanode Applications in Hydrogen Production
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- 31 January 2011, 1167-O04-07
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1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO2 Passivation Layer
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- 31 January 2011, 1167-O05-03
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Enhancement of InGaN-based MQW Grown on Si(111) Substrate by Underlying AlGaN/GaN SLS Cladding Layer
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- 31 January 2011, 1167-O02-05
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Diffusion Effect between Schottky Metals and AlGaN/GaN Heterostructure during High Temperature Annealing Process
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- 31 January 2011, 1167-O05-06
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ZnO Thin Film Deposition on Sapphire Substrates by Chemical Vapor Deposition
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- 31 January 2011, 1167-O07-09
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Fabrication of TiO2 Nanobelt Network for Dye-Sensitized Solar Cells
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- 31 January 2011, 1167-O03-11
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Utilizing Polarization Induced Band Bending for InGaN Solar Cell Design
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- 31 January 2011, 1167-O01-04
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Investigation of Composition-dependent Optical Phonon Modes in AlxGa1-xN Epitaxial Layers Grown on Sapphire Substrates
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- 31 January 2011, 1167-O07-05
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Characterization and Fabrication of InGaN-based Blue LED with Underlying AlGaN/GaN SLS Cladding Layer Grown on Si(111) Substrate
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- 31 January 2011, 1167-O04-01
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A III-nitride Layered Barrier Structure for Hyperspectral Imaging Applications
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- 31 January 2011, 1167-O06-03
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