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A III-nitride Layered Barrier Structure for Hyperspectral Imaging Applications

Published online by Cambridge University Press:  31 January 2011

Douglas Bell ,
Neeraj Tripathi ,
James Grandusky ,
Vibhu Jindal  and
Fatemeh Shahedipour-Sandvik
Douglas Bell
Affiliation:
lbell@jpl.nasa.gov, Jet Propulsion Laboratory, M/S 302-231, Pasadena, California, United States
Neeraj Tripathi
Affiliation:
ntripathi@uamail.albany.edu, University at Albany, College of Nanoscale Science and Engineering, Albany, New York, United States
James Grandusky
Affiliation:
grandujr@gmail.com, University at Albany, College of Nanoscale Science and Engineering, Albany, New York, United States
Vibhu Jindal
Affiliation:
Vibhu.Jindal@SEMATECH.com, University at Albany, College of Nanoscale Science and Engineering, Albany, New York, United States
Fatemeh Shahedipour-Sandvik
Affiliation:
SShahedipour@uamail.albany.edu, University at Albany, College of Nanoscale Science and Engineering, Albany, New York, United States
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Abstract

We report on a novel photodetector structure based on III-nitride materials. A layered configuration is used to create a barrier with voltage-tunable height. The barrier is used as a filter on photoexcited holes and electrons, and could form the basis for a dynamically tunable pixel in a hyperspectral imaging array. This would eliminate the need for external gratings and filters used in conventional hyperspectral instruments; in addition, the tunability of pixels allows decrease of the array dimension by one. The III-nitride materials family is a good candidate for this device, combining large band offsets with the ability for epitaxial growth. We have demonstrated the feasibility of using III-nitride materials to fabricate layered tunnel barriers, and have demonstrated tunability of photodetection using these structures. External quantum efficiencies of > 12% have been achieved with prototype devices.

Keywords

nitrideoptical propertiesepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1167: Symposium O – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2009 , 1167-O06-03
Copyright
Copyright © Materials Research Society 2009

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