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InGaP Layers Grown on Different GaAs Surfaces for High Efficiency Solar Cells

  • Oscar Martínez (a1), Vanesa Hortelano (a2), Vicente Parra (a3), Juan Jimenez (a4), Tatiana Prutskij (a5) and Claudio Pelosi (a6)...

Abstract

InGaP layers grown on non-polar and polar GaAs substrate faces are investigated by Raman spectroscopy, microphotoluminescence and cathodoluminescence. The growth on polar faces benefits disorder respect to the layers grown on non polar (001) faces. It is shown that both (111)Ga and (111)As faces result in disordered InGaP layers. However, the layers grown on (111)As faces present inhomogeneous composition. The layers grown on (111)Ga faces present homogeneous composition close to lattice matching and are almost disordered.

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Keywords

InGaP Layers Grown on Different GaAs Surfaces for High Efficiency Solar Cells

  • Oscar Martínez (a1), Vanesa Hortelano (a2), Vicente Parra (a3), Juan Jimenez (a4), Tatiana Prutskij (a5) and Claudio Pelosi (a6)...

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