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Silicon on Insulator Formed By O+ OR N+ Ion Implantation

Published online by Cambridge University Press:  28 February 2011

P.L.F. Hemment
P.L.F. Hemment*
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, England
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Abstract

The synthesis of buried layers of SiO2 and Si3N4, by ion implantation is reviewed. This process, which may be used to form device worthy silicon-on-insulator (SOI) structures, involves (i) implantation of O+ or N+ ions and (ii) high temperature processing to achieve defect annealing and chemical segregation of the implanted species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 207
Copyright
Copyright © Materials Research Society 1986

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References

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