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Low pH Chemical Etch Route for Smooth H-Terminated Si(100) And Study Of Subsequent Chemical Stability

Published online by Cambridge University Press:  10 February 2011

B. J. Hinds ,
D. E. Aspnes  and
G. Lucovsky
B. J. Hinds
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
D. E. Aspnes
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

To form atomically flat H-passivated Si(100) surfaces, wet chemical etching of sacrificial SiO2 layer has been examined. Roughness and chemical overlayer thickness, as monitored by ellipsometry shows a minima at an optimal solution of 1:0.5:30 HF(49wt\%):H2SO4 (98wt\%):H2O. A mechanistic study offers no evidence for a chemical smoothing from preferential non-Si(100) facet etching. Silicon planarization can be induced by rapid thermal annealing RTA of chemical oxides. The H-terminated Si(100) surfaces are found to be moderately reactive to ambient conditions as monitored by in-situ ellipsometry and Auger analysis. Atomic force microscopy (AFM) measurements show Si(100) surfaces to have a rms ∼1.0Å and Rmax values of 1.6–0.9Å. With measured roughness incorporate into ellipsometric model, a 5Å native oxide overlayer is rapidly incorporated into the Si(100) surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 191
Copyright
Copyright © Materials Research Society 1997

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References

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