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High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

Published online by Cambridge University Press:  03 September 2012

Sergey A. Nikishin ,
Nikolai N. Faleev ,
Vladimir G. Antipov ,
Sebastien Francoeur ,
Luis Grave de Peralta ,
George A. Seryogin ,
Mark Holtz ,
Tat'yana I. Prokofyeva ,
S. N. G. Chu  and
Andrei S. Zubrilov
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Sergey A. Nikishin
Affiliation:
Dept of Electrical Engineering, Texas Tech University, Lubbock, TX 79409, U. S. A
Nikolai N. Faleev
Affiliation:
Dept of Electrical Engineering, Texas Tech University, Lubbock, TX 79409, U. S. A
Vladimir G. Antipov
Affiliation:
Dept of Electrical Engineering, Texas Tech University, Lubbock, TX 79409, U. S. A
Sebastien Francoeur
Affiliation:
Dept of Electrical Engineering, Texas Tech University, Lubbock, TX 79409, U. S. A
Luis Grave de Peralta
Affiliation:
Dept of Electrical Engineering, Texas Tech University, Lubbock, TX 79409, U. S. A
George A. Seryogin
Affiliation:
Dept of Electrical Engineering, Texas Tech University, Lubbock, TX 79409, U. S. A
Mark Holtz
Affiliation:
Dept of Physics, Texas Tech University, Lubbock, TX 79409, U. S. A
Tat'yana I. Prokofyeva
Affiliation:
Dept of Physics, Texas Tech University, Lubbock, TX 79409, U. S. A
S. N. G. Chu
Affiliation:
Lucent/Bell Labs, Murray Hill, NJ 07974, U. S. A
Andrei S. Zubrilov
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg, 194021, Russia
Vyacheslav A. Elyukhin
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg, 194021, Russia
Irina P. Nikitina
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg, 194021, Russia
Andrei Nikolaev
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg, 194021, Russia
Yuriy Melnik
Affiliation:
TDI, Inc., Gathersburg, MD 20877, U. S. A
Vladimir Dmitriev
Affiliation:
TDI, Inc., Gathersburg, MD 20877, U. S. A
Henryk Temkin
Affiliation:
Dept of Electrical Engineering, Texas Tech University, Lubbock, TX 79409, U. S. A
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Abstract

We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlN. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick ( > 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W8.3
Copyright
Copyright © Materials Research Society 1999

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