Research Article
Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors
- Published online by Cambridge University Press: 03 September 2012, F99W4.7
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Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
- Published online by Cambridge University Press: 03 September 2012, F99W11.81
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Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes
- Published online by Cambridge University Press: 03 September 2012, F99W11.25
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Fabrication and Characterization of InGaN Nano-scale Dots for Blue and Green LED Applications
- Published online by Cambridge University Press: 03 September 2012, F99W11.74
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Efficient Acceptor Activation in AlxGa1−xN/GaN Doped Superlattices
- Published online by Cambridge University Press: 03 September 2012, F99W3.85
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Electrical Measurements in GaN: Point Defects and Dislocations
- Published online by Cambridge University Press: 03 September 2012, F99W10.5
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Correlation between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
- Published online by Cambridge University Press: 03 September 2012, F99W11.34
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Homo-Epitaxial Growth on Misoriented GaN Substrates by MOCVD
- Published online by Cambridge University Press: 03 September 2012, F99W6.3
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Photocurrent Spectroscopy Investigations of Mg-Related Defects Levels in p-Type GaN
- Published online by Cambridge University Press: 03 September 2012, F99W11.83
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A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
- Published online by Cambridge University Press: 03 September 2012, F99W11.78
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Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
- Published online by Cambridge University Press: 03 September 2012, F99W11.69
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Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition
- Published online by Cambridge University Press: 03 September 2012, F99W3.41
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Preparation and Characterization of Single-crystal Aluminum Nitride Substrates
- Published online by Cambridge University Press: 03 September 2012, F99W6.7
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Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
- Published online by Cambridge University Press: 03 September 2012, F99W1.2
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Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High in Content
- Published online by Cambridge University Press: 03 September 2012, F99W11.38
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Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
- Published online by Cambridge University Press: 03 September 2012, F99W1.6
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High-Temperature Reliability of GaN Electronic Devices
- Published online by Cambridge University Press: 03 September 2012, F99W4.8
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Optical Properties of AlGaN Quantum Well Structures
- Published online by Cambridge University Press: 03 September 2012, F99W11.35
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Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
- Published online by Cambridge University Press: 03 September 2012, F99W11.55
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Correlation between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity in ALGAN/GAN Modulation Doped Heterostructures
- Published online by Cambridge University Press: 03 September 2012, F99W11.12
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