Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-17T14:28:59.513Z Has data issue: false hasContentIssue false
  • English
  • Français

A Thermodynamic Approach to Ohmic Contact Formation to p-GaN

Published online by Cambridge University Press:  03 September 2012

Bo Liu ,
Mikko H. Ahonen  and
Paul H. Holloway
Bo Liu
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611-6400 Electronic mail: bliu@mail.mse.ufl.edu
Mikko H. Ahonen
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611-6400
Paul H. Holloway
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611-6400
Get access

Abstract

A new ohmic contact scheme for gallium nitride is presented. The use of Nitride-forming metal Over Gallide-forming metal, “NOG”, can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, Ni/Zn-Au, Ta/Ti, and Ni/Mg/Ni/Si contacts. In the present study, the “NOG” scheme was used to design Ni/Ti/Au and Ni/Al/Au metallization, and addition of Ti and Al nitride-forming metals to the Ni gallide-forming metal led to lower but still high contact resistance. Ti was shown to be better than Al as the nitride-forming metal based on the decrease of resistance in as deposited contacts. Compared to Ni/Au, four times more current was measured in Ni/Ti/Au contacts to p-GaN after anneal at 300°C for 5min. However the addition of the Ti nitride-forming metal led to lower stability at 500°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.78
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1. Suzuki, M., Kawakami, T., Arai, T., Kobayashi, S., Koide, Y., Uemura, T., Shibata, N. and Murakami, M., Appl. Phys. Lett., 1999, 74, 275 Google Scholar
2. Ho, J.-K., Jong, C.-S., Chiu, C. C., Chen, C.-Y., Appl. Phys. Lett., 1999, 74, 1275 Google Scholar
3. Fung, A. K., Borton, J. A., Nathan, M. I Hove, J. M. V. and Hickman, R., J. Elec. Mater., 1999, 28, 572 Google Scholar
4. Kim, T., Yoo, M. C. and Kim, T., III-V nitrides, MRS Symp. Proc., 1997, 449, 1061 Google Scholar
5. Ishikawa, H., Kobayashi, S., Koide, Y., Yamasaki, S., Nagai, S., Umezaki, J., Koike, M. and Murakami, M., J. of Appl. Phys., 2, 1997, 81, 1315 Google Scholar
6. King, D. J., Zhang, L., Ramer, J. C., Hersee, S. D. and Lester, L. F., III-V nitrides, MRS Symp. Proc. 1997, 468, 421 Google Scholar
7. Kim, J. K., Lee, J.-L., Lee, J. W., Shin, H. E., Park, Y. J. and Kim, T., Appl. Phys. Lett., 1998, 73, 2953 Google Scholar
8. Kim, T., Khim, J., Chae, S. and Kim, T., III-V nitrides, MRS Symp. Proc., 1997, 468, 427 Google Scholar
9. Mori, T., Kozawa, T., Ohwaki, T., Taga, Y., Nagai, S., Yamasaki, S., Asami, S., Shibata, N. and Koike, M., Appl. Phys. Lett.,1996, 69, 3537 Google Scholar
10. Yoo, M. C., Lee, J. W., Myoung, J. W., Shim, K. H. and Kim, K., MRS Symp. Proc., 1996, 423, 131 Google Scholar
11. Jang, J.-S., Chang, I.-S., Kim, H.-K., Seong, T.-Y., Lee, S. and Park, S.-J., Appl. Phys. Lett. 74, 70(1999)Google Scholar
12. Youn, D. H., Hao, M., Sato, H., Sugahara, T., nao, Y. and Sakai, S., Jpn. J. Appl. Phys. 37, 1768(1998)Google Scholar
13. Mohney, S. E. and Lin, X., Journal of Electronic Materials, 1996, 25, 811 Google Scholar
14. Mohney, S. E., Luther, B. P., Jackson, T. N. and Khan, M. A., MRS Symp. Proc. 395, 843(1996)Google Scholar
15. Holloway, P.H., Kim, T.-J., Trexler, J.T., Miller, S., Fijol, J.J., Lampert, W.V. and Haas, T.W., Appl. Surf. Sci., 1997, 117/118, 362 Google Scholar
16. Pankove, J. I., GaN and Related Materials, ed. Pearton, S. J., Gordon and Breach Science Publishers, Amsteredam, Netherlands, 1(1997)Google Scholar
17. Fukai, Y., Metal-Hydrogen System-basic bulk properties, Springer-Verlag, 31(1993)Google Scholar
18. Lester, L. F., Brown, J. M., Ramer, J. C., Ahang, L., Hersee, S. D. and Zolper, J. C., Appl. Phys. Lett. 69, 2737(1996)Google Scholar
19. Fan, Z. F., Mohammad, S. N., Kim, W., Aktas, O., Botchkarev, A. E. and Mokoc, H., Appl. Phys. Lett. 68, 1672(1996)Google Scholar
20. Lin, M. E., Ma, Z., Huang, F. Y., Fan, Z. F., Allen, L. H. and Morkoc, H., Appl. Phys. Lett. 64, 1003(1994)Google Scholar