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A Thermodynamic Approach to Ohmic Contact Formation to p-GaN

Published online by Cambridge University Press:  03 September 2012

Bo Liu ,
Mikko H. Ahonen  and
Paul H. Holloway
Bo Liu
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611-6400 Electronic mail: bliu@mail.mse.ufl.edu
Mikko H. Ahonen
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611-6400
Paul H. Holloway
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611-6400
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Abstract

A new ohmic contact scheme for gallium nitride is presented. The use of Nitride-forming metal Over Gallide-forming metal, “NOG”, can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, Ni/Zn-Au, Ta/Ti, and Ni/Mg/Ni/Si contacts. In the present study, the “NOG” scheme was used to design Ni/Ti/Au and Ni/Al/Au metallization, and addition of Ti and Al nitride-forming metals to the Ni gallide-forming metal led to lower but still high contact resistance. Ti was shown to be better than Al as the nitride-forming metal based on the decrease of resistance in as deposited contacts. Compared to Ni/Au, four times more current was measured in Ni/Ti/Au contacts to p-GaN after anneal at 300°C for 5min. However the addition of the Ti nitride-forming metal led to lower stability at 500°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.78
Copyright
Copyright © Materials Research Society 1999

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