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Correlation between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  03 September 2012

A. Kaschner ,
J. Holst ,
U. von Gfug ,
A. Hoffmann ,
F. Bertram ,
T. Riemann ,
D. Rudloff ,
P. Fischer ,
J. Christen  and
R. Averbeck
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A. Kaschner
Affiliation:
Institut für Festkörperphysik, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
J. Holst
Affiliation:
Institut für Festkörperphysik, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
U. von Gfug
Affiliation:
Institut für Festkörperphysik, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
A. Hoffmann
Affiliation:
Institut für Festkörperphysik, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
F. Bertram
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke-Universität, PO Box 4120, 39016 Magdeburg, Germany
T. Riemann
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke-Universität, PO Box 4120, 39016 Magdeburg, Germany
D. Rudloff
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke-Universität, PO Box 4120, 39016 Magdeburg, Germany
P. Fischer
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke-Universität, PO Box 4120, 39016 Magdeburg, Germany
J. Christen
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke-Universität, PO Box 4120, 39016 Magdeburg, Germany
R. Averbeck
Affiliation:
Infineon Technologies, Corporate Research, CPR 7, 81730 München, Germany
H. Riechert
Affiliation:
Infineon Technologies, Corporate Research, CPR 7, 81730 München, Germany
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Abstract

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm-1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.34
Copyright
Copyright © Materials Research Society 1999

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References

[1] Nakamura, S. and Fasol, G.: The Blue Laser Diode (Springer, Berlin, 1997).Google Scholar
[2] Kwon, Y.-H, Gainer, G. H., Bidnyk, S., Cho, Y.-H., Song, J. J., Hansen, M., and DenBaars, S. P., Appl. Phys. Lett. 75, 2545, (1999).Google Scholar
[3] Wang, T., Nakagawa, D., Lachab, M., Sugahara, T., and Sakai, S., Appl. Phys. Lett. 74, 3128, (1999).Google Scholar
[4] Kollmer, H., Im, J. S., Heppel, S., Off, J., Scholz, F., and Hangleiter, A., Appl. Phys. Lett. 74, 82, (1999).Google Scholar
[5] Ho, I.-H. and Stringfellow, G. B., Appl. Phys. Lett. 69, 2701, (1996).Google Scholar
[6] O'Donnell, K. P., Martin, R. W., and Middleton, P. G., Phys. Rev. Lett. 82, 237, (1999).Google Scholar
[7] Averbeck, R., Graber, A., Tews, H., Bernklau, D., Barnhöfer, U., and Riechert, H., SPIE Vol. 3279, 28, (1998).Google Scholar
[8] Bertram, F., Riemann, T., Christen, J., Kaschner, A., Hoffmann, A., Thomsen, C., Hiramatsu, K., Shibata, T., and Sawaki, N.; Appl. Phys. Lett. 74, 359, (1999).Google Scholar
[9] Shaklee, K. L., Nahory, R. E., and Leheny, R. F., J. Lum. 7, 284, (1973).Google Scholar
[10] Schuster, M., Gervais, P. O., Jobst, B., Hösler, W., Averbeck, R., Riechert, H., Iberl, A, and Stömmer, R., J. Phys. D Appl. Phys. 32, 56, (1999).Google Scholar
[11] Cho, Y.-H., Gainer, G. H., Fischer, A. J., Song, J. J., Keller, S., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 73, 1370, (1998).Google Scholar
[12] Christen, J., Riemann, T., Fischer, P., Holst, J., Hoffmann, A., and Heuken, M., MRS Fall Meeting Boston 1999.Google Scholar
[13] Pophristic, M., Long, F. H., Tran, C., Ferguson, I. T., and Karlicek, R. F., J. Appl. Phys. 86, 1114, (1999).Google Scholar
[14] Pophristic, M., Long, F. H., Tran, C., Karlicek, R. F., Feng, Z. C., and Ferguson, I. T., Appl. Phys. Lett. 73, 815, (1998).Google Scholar
[15] Cho, Y.-H., Song, J. J., Keller, S., Mishra, U. K., and DenBaars, S. P.,. Appl. Phys. Lett. 73, 3181, (1998).Google Scholar