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Preparation and Characterization of Single-crystal Aluminum Nitride Substrates

  • Leo J. Schowalter (a1) (a2), J. Carlos Rojo (a2), Nikolai Yakolev (a1), Yuriy Shusterman (a1), Katherine Dovidenko (a1), Rungjun Wang (a1), Ishwara Bhat (a1) and Glen A. Slack (a1) (a2)...

Abstract

Large (up to 10mm diameter) aluminum nitride (AlN) boules have been grown by the sublimation-recondensation method to study the preparation of high-quality single crystal substrates. The growth mechanism of the boules has been studied using AFM. It has been determined that large single crystal grains in those boules grow with a density of screw dislocations below 5×104 cm−3 while edge dislocations are at lower density (none were observed). High-quality AlN single crystal substrates for epitaxial growth have been prepared and characterized using Chemical Mechanical Polishing (CMP) and AFM imaging, respectively. Also, the differential etching effect of KOH solutions on the N and Al-terminated faces of AlN on vicinal c-faces has been investigated. In order to identify the N or Al-terminated face, convergent beam electron diffraction has been used.

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References

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1. Slack, G.A. and McNelly, T.F., J. Crystal Growth 34, 263 (1976); and G.A. Slack and T.F. McNelly, J. Crystal Growth 42, 560 (1977).
2. Schowalter, J., Rojo, J.C., Slack, G.A., Shusterman, Y., Wang, R., Bhat, I., and Arunmozhi, G., J. Crystal Growth (accepted 99).
3. Mileham, J.R., Pearton, S.J., Abernathy, C.R., MacKenzie, J.D., Shul, R. J., Kilcoyne, S.P.. Appl. Phys. Lett. 67, 1119 (1995).
4. Dovidenko, K., Oktyabrsky, S., Narayan, J., and MRazeghi, ., MRS Internet J. Nitride Semicond. Res. 4S1, G6.46 (1999).

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Preparation and Characterization of Single-crystal Aluminum Nitride Substrates

  • Leo J. Schowalter (a1) (a2), J. Carlos Rojo (a2), Nikolai Yakolev (a1), Yuriy Shusterman (a1), Katherine Dovidenko (a1), Rungjun Wang (a1), Ishwara Bhat (a1) and Glen A. Slack (a1) (a2)...

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