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Electrical Measurements in GaN: Point Defects and Dislocations

  • David C. Look (a1), Zhaoqiang Fang (a1) and Laura Polenta (a2)

Abstract

Defects can be conveniently categorized into three types: point, line, and areal. In GaN, the important point defects are vacancies and interstitials; the line defects are threading dislocations; and the areal defects are stacking faults. We have used electron irradiation to produce point defects, and temperature-dependent Hall-effect (TDH) and deep level transient spectroscopy (DLTS) measurements to study them. The TDH investigation has identified two point defects, an 0.06-eV donor and a deep acceptor, thought to be the N vacancy and interstitial, respectively. The DLTS study has found two point-defect electron traps, at 0.06 eV and 0.9 eV, respectively; the 0.06-eV trap actually has two components, with different capture kinetics. With respect to line defects, the DLTS spectrum in as-grown GaN includes an 0.45-eV electron trap, which has the characteristics of a dislocation, and the TDH measurements show that threading-edge dislocations are acceptor-like in n-type GaN. Finally, in samples grown by the hydride vapor phase technique, TDH measurements indicate a strongly n-type region at the GaN/Al2O3 interface, which may be associated with stacking faults. All of the defects discussed above can have an influence on the dc and/or ac conductivity of GaN.

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1. Maruska, H. P. and Tietjen, J.J., Appl. Phys. Lett. 15, 327 1969.
2. Look, D.C., Reynolds, D.C., Hemsky, J.W., Sizelove, J.R., Jones, R.L., and Molnar, R.J., Phys. Rev. Lett. 79, 2273 1997.
3. Neugebauer, J. and Walle, C. G. Van de, Phys. Rev. B 50, 8067 1994.
4. Evoy, S., Craighead, H.G., Keller, S., Mishra, U.K., and DenBaars, S.P., J. Vac. Sci. Technol. B 17, 29 1999.
5. Mukai, T., Takekawa, K., and Nakamura, S., Jpn. J. Appl. Phys. 37, L839 1998.
6. Look, D.C. and Sizelove, J.R., Phys. Rev. Lett. 82, 1237 1999.
7. Auret, F.D., Goodman, S.A., Koschnick, F.K., Spaeth, J-M., Beaumont, B., and Gibart, P., Appl.Phys. Lett. 73, 3745 1998.
8. Fang, Z-Q., Hemsky, J.W., Look, D.C., and Mack, M.P., Appl. Phys. Lett. 72, 448 1998.
9. Romano, L.T., Krusor, B.S., and Molnar, R.J., Appl. Phys. Lett. 71, 2283 1997.
10. Stampfl, C. and Walle, C.G. Van de, Phys. Rev. B 57, R15052 1998.
11. Look, D.C. and Molnar, R.J., Appl. Phys. Lett. 70, 3377 1997.
12. Keller, S., Keller, B.P., Wu, Y-F., Heying, B., Kapolnek, D., Speck, J. S., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 68, 1525 1996.
13. Wright, A.F. and Grossner, U., Appl. Phys. Lett. 73, 2751 1998.
14. Leung, K., Wright, A.F., and Stechel, E.B., Appl. Phys. Lett. 74, 2495 1999.
15. Bandie, Z.Z, McGill, T.C. and Ikonic, Z., Phys. Rev. B 56, 3564 1997.
16. Agullo-Lopez, F., Catlow, C.R.A., and Townsend, P.D., Point Defects in Materials, (Academic, New York, 1988).
17. Auret, F.D., Goodman, S.A., Koschnick, F.K., Spaeth, J-M., Beaumont, B., and Gibart, P., Appl.Phys. Lett. 74, 407 1999.
18. Auret, F.D., Goodman, S.A., Koschnick, F.K., Spaeth, J-M., Beaumont, B., and Gibart, P., Appl.Phys. Lett. 74, 2173 1999.
19. Polenta, L., Fang, Z-Q., and Look, D.C., 1999 (unpublished).
20. Look, D.C., Hemsky, J.W., and Sizelove, J.R., Phys. Rev. Lett. 82, 2552 1999.
21. Fang, Z-Q., Look, D.C., Kim, W., Fan, Z., Botchkarev, A., and Morkoç, H., Appl. Phys. Lett. 72, 2277 1999.
22. Linde, M., Uftring, S.J., Watkins, G.D., Härle, V., and Scholz, F., Phys. Rev. B 55, R10177 1997.
23. Saarinen, K., Nissilä, J., Hautojärvi, P., Likonen, J., Suski, T., Grzegory, I., Lucznik, B., and Porowski, S., Appl. Phys. Lett. 75, 2441 1999.

Electrical Measurements in GaN: Point Defects and Dislocations

  • David C. Look (a1), Zhaoqiang Fang (a1) and Laura Polenta (a2)

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