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Defect Structures of B12As2 Epilayers Grown on c-plane and a-plane 6H-SiC Substrates

Published online by Cambridge University Press:  01 February 2011

Hui Chen ,
Guan Wang ,
Michael Dudley ,
Lihua Zhang ,
Yimei Zhu ,
Yi Zhang ,
James H. Edgar  and
Martin Kuball
Hui Chen
Affiliation:
mibe_7@yahoo.com, Stony Brook University, Materials Science and Engineering, 100 Nicolls Rd, Stony Brook, NY, 11790, United States, 6316328501, 6316328052
Guan Wang
Affiliation:
guwang@ic.sunysb.edu, Stony Brook University, Materials Science and Engineering, Stony Brook, NY, 11794, United States
Michael Dudley
Affiliation:
mdudley@notes.cc.sunysb.edu, Stony Brook University, Materials Science and Engineering, Stony Brook, NY, 11794, United States
Lihua Zhang
Affiliation:
lhzhang@bnl.gov, Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, NY, 11973, United States
Yimei Zhu
Affiliation:
zhu@bnl.gov, Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, NY, 11973, United States
Yi Zhang
Affiliation:
yizh@ksu.edu, Kansas State University, Chemical Engineering, Manhattan, KS, 66506, United States
James H. Edgar
Affiliation:
edgarjh@ksu.edu, Kansas State University, Chemical Engineering, Manhattan, KS, 66506, United States
Martin Kuball
Affiliation:
Martin.Kuball@bristol.ac.uk, University of Bristol, Physics, Bristol, BS8 1TL, United Kingdom
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Abstract

B12As2 epitaxial layers grown on (0001) 6H-SiC and (1120) 6H-SiC substrates have been studied using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and synchrotron white beam x-ray topography (SWBXT) and investigated with the aid of crystal visualization software. SWBXT showed that B12As2 adopted [111] growth orientation, parallel to [0001]SiC, on c-plane 6H-SiC and adopted [101] growth orientation, parallel to [1120]SiC, on a-plane 6H-SiC. However, SWBXT also revealed the twins in both sets of the B12As2 films, consistent with the SEM observation of the surface morphology. Cross-sectional HRTEM also confirmed the presence of twins in both cases and also revealed the existence of an intermediate layer between the c-plane 6H-SiC and the B12As2 film. By correlating the HRTEM observation and crystal visualization, the atomic configurations across the twin boundaries in both samples as well as those in the intermediate layer in the c-plane sample were proposed.

Keywords

defectstransmission electron microscopy (TEM)bonding
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F03-01
Copyright
Copyright © Materials Research Society 2007

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References

1. Michael, J. R., Aselage, T. L., Emin, D., Kotula, P.G., J. Mater. Res., 20(11), 3004 (2005).Google Scholar
2. Emin, D., Physics Today, 55, January (1987).Google Scholar
3. Emin, D., J. Sol. Sta. Chem., 179, 2791 (2006).Google Scholar
4. Emin, D., T. Aselage, L., J. App. Phys., 97, 013529 (2005).Google Scholar
5. Emin, D., J. Sol. Sta. Chem., 177, 1619 (2004).Google Scholar
6. Carrard, M., Emin, D., Zuppiroli, L., Phys. Rev. B, 51(17), 11270 (1995).Google Scholar
7. Vetter, W. M., Nagarajan, R., Edgar, J. H., Dudley, M., Mater. Lett., 58, 1331 (2004).Google Scholar
8. Wang, S. H., Lysczek, E. M., Liu, B., Mohney, S. E., Xu, Z., Nagarajan, R., Edgar, J. H., App. Phys. Lett., 87, 042103 (2005).Google Scholar
9. Xu, Z., J. Edgar, H., Look, D. C., Baumann, S., Bleiler, R. J., Wang, S. H., Mohney, S. E., J. App. Phys., 101, 053710 (2007).Google Scholar