Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II
Research Article
Formation of Hydrogen Related Defects and Nano-Voids in Plasma Hydrogenated ZnO
- Published online by Cambridge University Press: 01 February 2011, 0994-F02-09
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Interaction between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers
- Published online by Cambridge University Press: 01 February 2011, 0994-F12-03
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Lead Iodide Thin Films Grown Using N.N-Dimethylformamide as Solvent
- Published online by Cambridge University Press: 01 February 2011, 0994-F03-05
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The Charge Carriers Transport Mechanism Through the Interface Layer of the p-GaSe(Cu)/n+GaAs Heterojunctions
- Published online by Cambridge University Press: 01 February 2011, 0994-F11-18
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Silver Nanocrystals at Cavities Created by High Energy Helium Implantation in Bulk Silicon
- Published online by Cambridge University Press: 01 February 2011, 0994-F11-06
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On the Impact of Metal Impurities on the Carrier Lifetime in N-type Germanium
- Published online by Cambridge University Press: 21 April 2011, 0994-F09-06
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Shallow Junction Engineering by Phosphorus and Carbon Co-implantation: Optimization of Carbon Dose and Energy
- Published online by Cambridge University Press: 01 February 2011, 0994-F08-04
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Simulation of Vacancy Cluster Formation and Binding Energies in Single Crystal Germanium
- Published online by Cambridge University Press: 21 April 2011, 0994-F03-08
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Defect Reduction and Its Mechanism of Selective Ge Epitaxy in Trenches on Si(001) Substrates Using Aspect Ratio Trapping
- Published online by Cambridge University Press: 01 February 2011, 0994-F10-05
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Cathodoluminescence Study of V-defects in AlGaAs-based High-power Laser Bars
- Published online by Cambridge University Press: 01 February 2011, 0994-F07-03
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Nanocavity Buffer Induced by Gas Ion Implantation in Silicon Substrate for Strain Relaxation of Heteroepitaxial Si1-xGex/Si Thin Layers
- Published online by Cambridge University Press: 01 February 2011, 0994-F11-08
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Characterization of Nanocavities in Silicon Using Small Angle X-Ray Scattering
- Published online by Cambridge University Press: 01 February 2011, 0994-F06-02
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Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?
- Published online by Cambridge University Press: 01 February 2011, 0994-F01-03
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Effect of Strain and Polarization Grading on Hole Transport across Tunneling Barriers between Metals and Wurtzite Indium Gallium Nitride
- Published online by Cambridge University Press: 01 February 2011, 0994-F08-05
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Influence of Oxygen Annealing on Electrical Properties of ZnO:Cl Thin Films
- Published online by Cambridge University Press: 01 February 2011, 0994-F01-07
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Hydrostatic Pressure Studies of GaN/AlGaN/GaN Heterostructure Devices with Varying AlGaN Thickness and Composition
- Published online by Cambridge University Press: 01 February 2011, 0994-F11-19
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Bright-Pixel Defects in Irradiated CCD Image Sensors
- Published online by Cambridge University Press: 01 February 2011, 0994-F12-06
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Germanium Layer Exfoliation by Ion-Cut Processes
- Published online by Cambridge University Press: 01 February 2011, 0994-F09-05
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Comparison of Silicon Photoluminescence and Photoconductive Decay for Material Quality Characterization
- Published online by Cambridge University Press: 01 February 2011, 0994-F07-04
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An Evaluation of an Automated Detection Algorithm to Count Defects Present in X-Ray Topographical Images of SiC Wafers
- Published online by Cambridge University Press: 01 February 2011, 0994-F11-13
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