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Germanium Layer Exfoliation by Ion-Cut Processes

Published online by Cambridge University Press:  01 February 2011

Reinhart Job  and
Wolfgang Düngen
Reinhart Job
Affiliation:
reinhart.job@fernuni-hagen.de, University of Hagen, Mathematics and Computerscience, Universitaetsstr. 27, (EET), Hagen, D-58084, Germany, +4923319871183, +492331987357
Wolfgang Düngen
Affiliation:
wolfgang.duengen@fernuni-hagen.de, University of Hagen, Department of Mathematics and Computerscience, Universitätsstr. 27, Hagen, D-58084, Germany
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Abstract

(100)–oriented Czochralski germanium (Cz Ge) wafers were implanted with hydrogen at en-ergies up to 100 keV (related to H+) at a doses of D = 4·106 H+/cm2. Post-hydrogen annealing in normal air atmosphere on a hotplate was employed for 10 min at various temperatures between 350 °C and 600 °C to investigate the samples with regard to blistering and layer exfoliation having in mind the Smart-Cut™ technology for GOI structure formation. The generation and evolution of blisters and craters (“exploded” blisters demonstrating layer exfoliation) were investigated in dependence on the annealing temperature by atomic force microscopy and μ-Raman spectroscopy. The latter method points out the appearance of strong tensile stress upon H+ implantation and subsequent annealing. If the tensile stress exceeds about 1.2 GPa layer exfoliation occurs.

Keywords

GeRaman spectroscopyion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F09-05
Copyright
Copyright © Materials Research Society 2007

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