Skip to main content Accessibility help
×
Home

Defect Reduction and Its Mechanism of Selective Ge Epitaxy in Trenches on Si(001) Substrates Using Aspect Ratio Trapping

  • Ji-Soo Park (a1), J. Bai (a2), M. Curtin (a3), B. Adekore (a4), Z. Cheng (a5), M. Carroll (a6), M. Dudley (a7) and A. Lochtefeld (a8)...

Abstract

Defect-free germanium has been demonstrated in SiO2 trenches on silicon via aspect ratio trapping, whereby defects arising from lattice mismatch are trapped by laterally confining sidewalls. Results were achieved through a combination of conventional photolithography, reactive ion etching of SiO2, and selective growth of Ge as thin as 450 nm. It was revealed that facets, when formed early on in the growth process, play a dominant role in determining the configurations of threading dislocations in the films. This approach shows great promise for the integration of Ge and/or III-V materials, sufficiently large for key device applications, onto silicon substrates.

Copyright

References

Hide All
1. Lee, M., Leitz, C. W, Cheng, Z., Pitera, A. J, Langdo, T., Currie, M. T, Taraschi, G., Fitzgerald, E. A, and Antoniadis, D. A, Appl. Phys. Lett. 79, 3344 (2001).
2. Chui, C. O, Kim, H., Chi, D., Triplett, B. B, McIntyre, P. C, and Saraswat, K. C, Tec. Dig. -Int. Electron Device Meet. 2002, 437.
3. Fitzgerald, E. A, Xie, Y. –H., Monroe, D. Silverman, P. J, Kuo, J. M, Kortan, A. R, Thiel, F. A, and Weir, B. E, J. Vac. Sci. Technol. B 10, 1807 (1992)
4. Currie, M. T, Samavedam, S. B, Langdo, T. A, Leitz, C. W, and Fitzgerald, E. A, Appl. Phys. Lett. 72, 1718 (1998).
5. Nakaraha, S. Tezuka, T. Sugiyama, N. Moriyama, Y. and Takagi, S. Appl. Phys. Lett. 83, 3516 (2003).
6. Luan, H. -C., Lim, D. R, Lee, K. K, Chen, K. M, Sandland, J. G, Wada, K. and Kimerling, L. C, Appl. Phys. Lett. 75, 2909 (1999).
7. Langdo, T.A., Leitz, C.W., Currie, M.T., Fitzgerald, E.A., Lochtfeld, A. and Antoniadis, D.A., Appl. Phys. Lett. 76, 3700 (2000).
8. Li, Q. Han, S. M, Brueck, S. R. J. Hersee, S. Jiang, Y. –B., and Xu, H. Appl. Phys. Lett. 83, 5032 (2003).
9. Lou, J.-C., Oldham, W.G., Kawayoshi, H. and Ling, P. J. Appl. Phys. 71, 3225 (1992).
10. Park, J.-S., Curtin, M. Bai, J. Carroll, M. and Lochtefeld, A. Jpn. J. Appl. Phys. 45, 8581 (2006).
11. Park, J.-S., Bai, J. Curtin, M. Adekore, B. Carroll, M, and Lochtefeld, A. Appl. Phys. Lett. 90, 052113 (2007).
12. Bai, J. Park, J.-S., Cheng, Z. Curtin, M. Adekore, B. Carroll, M. Lochtefeld, A. and Dudley, M. Appl. Phys. Lett. 90, 101902 (2007).
13. Klapper, H. Mater. Chem. Phys. 66, 101 (2000).
14. Tseng, H.-C., Chang, C. Y. Pan, F. M. Chen, J. R. and Chen, L. J. Appl. Phys. Lett. 71, 2328 (1997).
15. Lim, S. Song, S. Lee, G. Yoon, E. and Lee, J. J. Vac. Sci. Technol. B 22, 682 (2004).
16. Karmous, A. Berbezier, I. and Ronda, A. Phys. Rev. B 73, 075323 (2006).
17. Zacharias, M. and Streitenberger, P. Phys. Rev. B 62, 8391 (2000).

Keywords

Defect Reduction and Its Mechanism of Selective Ge Epitaxy in Trenches on Si(001) Substrates Using Aspect Ratio Trapping

  • Ji-Soo Park (a1), J. Bai (a2), M. Curtin (a3), B. Adekore (a4), Z. Cheng (a5), M. Carroll (a6), M. Dudley (a7) and A. Lochtefeld (a8)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed