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Comparison of Structural and Electrical Characteristics of Solid-Phase Epitaxial Films Recrystallized By Rapid Thermal Annealing and Furnace Annealing

Published online by Cambridge University Press:  28 February 2011

R. Sundaresan ,
P.-H. Chang ,
S.D.S. Malhi  and
H.W. Lam
R. Sundaresan
Affiliation:
Semiconductor Process and Design Center, MS 944, Texas Instruments Inc., Dallas, TX 75265
P.-H. Chang
Affiliation:
Central Research Laboratory, MS 147, Texas Instruments Inc., Dallas, TX 75265
S.D.S. Malhi
Affiliation:
Semiconductor Process and Design Center, MS 944, Texas Instruments Inc., Dallas, TX 75265
H.W. Lam
Affiliation:
Semiconductor Process and Design Center, MS 944, Texas Instruments Inc., Dallas, TX 75265
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Abstract

Solid-phase epitaxial regrowth of polysilicon films. amorphized by a room-temperature silicon implant. has been achieved using a (low temperature) furnace anneal or a (high temperature) rapid thermal anneal. Lateral extension of the growth onto an oxide layer, 4 μm wide, has also been observed. The electrical properties of the films were examined by building MO2S devices in them. Average electron mobilities of 520 cm2/v-sec and 200 cm2/v-sec have been measured for films regrown on top of silicon and oxide respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 175
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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