Skip to main content Accessibility help
×
Home

Selective growth of polycrystalline diamond thin films on a variety of substrates using selective damaging by ultrasonic agitation

  • R. Ramesham (a1) and T. Roppel (a1)

Abstract

Polycrystalline diamond thin films have been selectively grown on silicon, silicon dioxide, silicon nitride, tantalum, molybdenum, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Processes were developed to selectively damage the substrates by ultrasonic agitation in methanol containing diamond particles of typical size 90 μm. Optical and scanning electron microscopy is used to study selectivity and morphology of as-grown diamond thin films.

Copyright

References

Hide All
1.Field, J. E., The Properties of Diamond (Academic Press, Ltd., London, 1979).
2.Whetten, T. J., Armstead, A. A., Grzybowski, T. A., and Ruoff, A. L., J. Vac. Sci. Technol. A2, 477 (1984).
3.Efremow, N. N., Geis, M. W., Flanders, D. C., Lincoln, G. A., and Economou, N. P., J. Vac. Sci. Technol. B3, 416 (1985).
4.Mitsuda, K., Kojima, Y., Yoshida, T., and Akashi, K., J. Mater. Sci. 22, 1557 (1987).
5.Yugo, S., Kimura, T., Kanai, H., and Adachi, Y., in Novel Refractory Semiconductors, edited by Emin, D., Aselage, T. L., and Wood, C. (Mater. Res. Soc. Symp. Proc. 97, Pittsburgh, PA, 1987), pp. 327332.
6.Chang, C. P., Flamm, D. L., Ibbotson, D. E., and Mucha, J. A., J. Appl. Phys. 63, 1744 (1988).
7.Ramesham, R. and Ellis, C., J. Mater. Res. 7, 11901195 (1992).
8.Ramesham, R. and Ellis, C., in Wide Band-Gap Semiconductors, edited by Moustakas, T. D., Pankove, J. I., and Hamakawa, Y. (Mater. Res. Soc. Symp. Proc. 242, Pittsburgh, PA, 1992).
9.Denning, P. A. and Stevenson, D. A., in New Diamond Science and Technology, edited by Messier, R., Glass, J. T., Butler, J. E., and Roy, R. (Mater. Res. Soc. Int. Conf. Proc. Series, Pittsburgh, PA, 1991), pp. 403408.
10.Denning, P. A. and Stevenson, D. A., in Proc. 1st Int. Conf. on the Applications of Diamond Thin Films and Related Materials, edited by Tzeng, Y., Yoshikawa, M., Murakawa, M., and Feldman, A., Auburn, AL, August 1722, 1991 (Materials Science Monographs, 73, Elsevier, Amsterdam), pp. 383–388.
11.Hirabayashi, K. and Taniguchi, Y., Appl. Phys. Lett. 53, 1815 (1988).
12.Kobashi, K., Miyata, K., Kumagai, K., Nakaue, A., Tachibana, H., Inoue, T., and Kawate, Y., The Electrochemical Society, 175th Meeting, Los Angeles, CA, Paper #82 (1989), pp. 122123.
13.Davidson, J. L., Ramesham, R., and Ellis, C., Fourth Annual SDIO/IST-ONR Diamond Technology Initiative Symposium, Crystal City, VA, Paper #TP3 (1989).
14.Davidson, J. L., Ellis, C., and Ramesham, R., J. Electron. Mater. 18, 711 (1989).
15.Ramesham, R., Ellis, C., Roppel, T., Jaworske, D. A., and Baugh, W., in Plasma Processing and Synthesis of Materials III, edited by Apelian, D. and Szekely, J. (Mater. Res. Soc. Symp. Proc. 190, Pittsburgh, PA, 1991), pp. 341348.
16.Ramesham, R., Ellis, C., and Roppel, T., 3rd Int. Conf. on Amorphous and Crystalline Silicon Carbide (ICACSC'90), Howard University, Washington, DC, Paper #V.4, April 12–13 (1990).
17.Ramesham, R., Roppel, T., Ellis, C., Jaworske, D. A., and Baugh, W., J. Mater. Res. 6, 1278 (1991).
18.Ramesham, R., Roppel, T., Hajek, B. F., Ellis, C., and Loo, B. H., in New Diamond Science and Technology, edited by Messier, R., Glass, J. T., Butler, J. E., and Roy, R. (Mater. Res. Soc. Int. Conf. Proc. Series, Pittsburgh, PA, 1991), pp. 943948.
19. Davidson, J. L., Ramesham, R., and Ellis, C., J. Electrochem. Soc. 137, 3206 (1990).
20.Ramesham, R., in Wide Band-Gap Semiconductors, edited by Moustakas, T., Pankove, J.I., and Hamakawa, Y. (Mater. Res. Soc. Symp. Proc. 242, Pittsburgh, PA, 1992).
21.Ma, J.S., Kawarada, H., Yonehara, T., Suzuki, J.I., Wei, J., Yokota, Y., and Hiraki, A., Appl. Phys. Lett. 55, 1071 (1989).
22.Geis, M. W., Proc. of the IEEE 79, 5, 669 (1991).
23.Ramesham, R., Roppel, T., Hajek, B.F., and Ellis, C., J. Electrochem. Soc. 137, 3203 (1990).
24.Jaworske, D. A., Ellis, C. D., Ramesham, R., and Roppel, T., in Proc. 2nd Int. Symp. on Diamond Materials,edited by Purdes, A. J., Angus, J., Davis, R. F., Meyerson, B. M., Spear, K. E., and Yoder, M. (The Electrochemical Society, Pennington, NJ, 918, 1991) pp. 608614.

Selective growth of polycrystalline diamond thin films on a variety of substrates using selective damaging by ultrasonic agitation

  • R. Ramesham (a1) and T. Roppel (a1)

Metrics

Altmetric attention score

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed