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9 - Computation and learning with metal–insulator transitions and emergent phases in correlated oxides

from Section III - Alternative field effect devices

Published online by Cambridge University Press:  05 February 2015

By
You Zhou ,
Sieu D. Ha  and
Shriram Ramanathan
Edited by
Tsu-Jae King Liu  and
Kelin Kuhn
You Zhou
Affiliation:
Harvard University
Sieu D. Ha
Affiliation:
Harvard University
Shriram Ramanathan
Affiliation:
Harvard University
Tsu-Jae King Liu
Affiliation:
University of California, Berkeley
Kelin Kuhn
Affiliation:
Cornell University, New York
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Summary

Overview

Electron devices with components that undergo phase transitions can add new functionality to classical devices such as field effect transistors and p-n junctions. In this chapter we examine recent research on utilizing phase transition materials, such as but not limited to vanadium dioxide (VO2), for electronics and provide a perspective on how phase transition electronics may complement and add function to complementary metal–oxide–semiconductor devices in emerging computing paradigms. In parallel, there is continuous need to innovate in high-frequency communications, reconfigurable devices and sensors. These fields sometimes may not directly overlap with research directions in computing, however, when new materials are being explored, a variety of interesting properties are uncovered and there is cross-pollination of ideas. In correlated oxides too, studies motivated by fast switching properties have created broad interest such as in the microwave device arena and are considered here for completeness. It is finally pointed out that ionic conduction in oxides or ion-mediated electronic phase transitions induced for example in electric double layer transistors or their solid-state counterparts could play a significant role in future research and development of such correlated electron material systems. Although operationally slower than solid-state devices, liquid gates offer new directions to explore paradigms in reconfigurable fluidic devices that have seen substantial growth in the soft matter fields.

Introduction

Scaling of the metal–oxide–semiconductor field effect transistor (MOSFET) has sustained the growth of the microelectronics industry for numerous decades. As the gate length of these transistors approaches the sub-10 nm regime, it is becoming increasingly difficult to enhance device performance metrics such as energy efficiency and switching speed accordingly. The fundamental limit of complementary metal–oxide–semiconductor (CMOS) scaling that originates from the basic operation principle of MOSFETs has motivated researchers to look for alternative computation component/architecture to complement current CMOS technology. Currently, this is perhaps one of the most important problems in the condensed matter community and has great significance to continued growth of the hard sciences in academia.

Type
Chapter
Information
CMOS and Beyond
Logic Switches for Terascale Integrated Circuits
 , pp. 209 - 235
Publisher: Cambridge University Press
Print publication year: 2015

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