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Effect of film thickness and deposition rate on the AC electrical conductivity and dielectric properties of SbxS1−x thin films

Published online by Cambridge University Press:  11 December 2002

A. A. El-Shazly ,
M. M. El-Samanoudy ,
M. A. M. Seyam ,
A. H. Ammar  and
E. M. Assim
A. A. El-Shazly
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
M. M. El-Samanoudy*
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
M. A. M. Seyam
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
A. H. Ammar
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
E. M. Assim
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
*
msaman@hotmail.com
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Abstract

Measurements were carried out in the temperature range 293–453 K over the frequency range 100 Hz–100 kHz on the ac electrical properties of vacuum deposited SbxS1−x thin films of different thicknesses prepared with different deposition rates. The obtained experimental data have been analyzed with reference to various theoretical models. The ac conductivity increases with frequency according to the relation σac(ω) αωs. The analysis shows that the correlated barrier-hopping (CBH) model is the most appropriate mechanism for the ac conduction in these films. The value of the dielectric constant slightly changed for higher frequencies irrespective of temperature change, whereas its value increases at higher temperature with the decrease in frequency. The dielectric loss has been found to increase with increase in temperature and decrease in frequency. The deposition rate and film thickness have a remarkable effect on ac conductivity and dielectric properties. The maximum barrier height wm is calculated from dielectric measurements according to Guintini et al. equation based on Elliott (CBH) model; which suggested the hopping of charge carriers over a potential barrier between charged defect states. The density of states was also calculated using Elliott model.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 21 , Issue 3 , March 2003 , pp. 225 - 231
Copyright
© EDP Sciences, 2003

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