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Synthesis of one-dimensional GaN nanorods on Si(111) substrates by magnetron sputtering

Published online by Cambridge University Press:  08 November 2006

Shoubin Xue ,
Huizhao Zhuang ,
Chengshan Xue  and
Lijun Hu
Shoubin Xue
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Huizhao Zhuang*
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Chengshan Xue
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Lijun Hu
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
*
zhuanghuizhao@sdnu.edu.cn
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Abstract

GaN nanorods have been successfully synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga2O3/ZnO films at 950 °C in a quartz tube. The GaN nanorods have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), field-emission transmission electron microscope (FETEM), Fourier transform infrared (FTIR) system and fluorescence spectrophotometer. The results show that the nanorods are pure hexagonal GaN wurtzite structure with lengths of about several micrometers and diameters ranging from 100 nm to 750 nm, and the growth direction of GaN nanorods is perpendicular to (101) plane. The photoluminescence (PL) spectrum indicates that the good emission property for the nanorods. Finally, the growth mechanism is also briefly discussed.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 37 , Issue 1 , January 2007 , pp. 53 - 55
Copyright
© EDP Sciences, 2006

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