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Oxidation of ion beam synthesised embedded indium nanoclusters in silica

Published online by Cambridge University Press:  22 February 2011

P. Santhana Raman ,
K. G.M. Nair ,
A. Rath ,
P. V. Satyam ,
B. K. Panigrahi  and
V. Ravichandran
P. Santhana Raman
Affiliation:
Materials Science Centre, Department of Nuclear Physics, University of Madras, Chennai, 600025, India Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603102, India
K. G.M. Nair*
Affiliation:
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603102, India
A. Rath
Affiliation:
Institute of Physics, Sachivalaya Marg, Bhubaneswar, 751 005, India
P. V. Satyam
Affiliation:
Institute of Physics, Sachivalaya Marg, Bhubaneswar, 751 005, India
B. K. Panigrahi
Affiliation:
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603102, India
V. Ravichandran
Affiliation:
Materials Science Centre, Department of Nuclear Physics, University of Madras, Chennai, 600025, India
*
kgmn@igcar.gov.in
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Abstract

The paper discusses the results of a study on the formation of indium oxide nanoclusters in silica samples implanted with high energy indium ions. Trace quantities of indium oxide were found on as-implanted samples. On annealing in vacuum/oxygen atmosphere significant increase in the quantity of indium oxide phase was observed. A mechanism is proposed for the formation of indium oxide and is mainly attributed to the reaction of metallic indium with the oxygen released from the silica matrix by ballistic process. During annealing in oxygen atmosphere the oxygen diffusing into the silica also plays a role in the oxidation of indium NCs.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 53 , Issue 3: Focus on Telecom 2009 & JFMMA , March 2011 , 30403
Copyright
© EDP Sciences, 2011

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