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X-Ray Topographic Analysis of Strain Fields Associated with Micron-Sized Gratings on Si(100) Surfaces

Published online by Cambridge University Press:  28 February 2011

A.P. Jardine ,
M. Dudley ,
G. Tolis ,
G-D. Yao  and
S.M. Durbin
A.P. Jardine
Affiliation:
Department of Materials Science, S.U.N.Y. Stony Brook, Stony Brook, NY 11794
M. Dudley
Affiliation:
Department of Materials Science, S.U.N.Y. Stony Brook, Stony Brook, NY 11794
G. Tolis
Affiliation:
Department of Materials Science, S.U.N.Y. Stony Brook, Stony Brook, NY 11794
G-D. Yao
Affiliation:
Department of Materials Science, S.U.N.Y. Stony Brook, Stony Brook, NY 11794
S.M. Durbin
Affiliation:
Department of Physics, Purdue University, West Lafayette, IN 47907
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Abstract

Si(100) single crystals containing circular gratings etched into the surface using reactive ion etching were analysed using both monochromatic and white beam reflection X-ray topography. Some features of observed X-ray topographic contrast associated with the gratings were modelled using a diffracting zone model, based on a simple radial in-plane strain field. Reasonable agreement was obtained between this model and observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 533
Copyright
Copyright © Materials Research Society 1990

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References

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