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Uniformity of Misfit Strain in Heteroepitaxial (Ba, Sr)Tio3 Films on SrRuO3/SrTiO3

Published online by Cambridge University Press:  10 February 2011

K. Abe ,
N. Yanase ,
K. Sano ,
N. Fukushima  and
T. Kawakubo
K. Abe
Affiliation:
Materials and Devices Research Laboratories, R&D Center, Toshiba Corp., Komukai-Toshibacho, Saiwai-ku, Kawasaki 210–8582, Japan. kazuhide.abe@toshiba.co.jp
N. Yanase
Affiliation:
Materials and Devices Research Laboratories, R&D Center, Toshiba Corp., Komukai-Toshibacho, Saiwai-ku, Kawasaki 210–8582, Japan. kazuhide.abe@toshiba.co.jp
K. Sano
Affiliation:
Materials and Devices Research Laboratories, R&D Center, Toshiba Corp., Komukai-Toshibacho, Saiwai-ku, Kawasaki 210–8582, Japan. kazuhide.abe@toshiba.co.jp
N. Fukushima
Affiliation:
Materials and Devices Research Laboratories, R&D Center, Toshiba Corp., Komukai-Toshibacho, Saiwai-ku, Kawasaki 210–8582, Japan. kazuhide.abe@toshiba.co.jp
T. Kawakubo
Affiliation:
Materials and Devices Research Laboratories, R&D Center, Toshiba Corp., Komukai-Toshibacho, Saiwai-ku, Kawasaki 210–8582, Japan. kazuhide.abe@toshiba.co.jp
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Abstract

Uniformity of lattice misfit strain was quantitatively evaluated in heteroepitaxial (Ba, Sr)TiO3 films which were deposited by radio-frequency magnetron sputtering on SrRuO3/SrTiO3 substrates. Due to lattice misfit strain, the (Ba, Sr)TiO3 films had a 3% longer c-axis than the inherent bulk of (Ba0.75Sr0.25)TiO3. As analyzed by Hall's theory, the uniformity of the strain was 0.3% of the c-axis (0.413 nm) and 9% of the elongation of the c-axis (0.015 nm). It was suggested by the comparative study of two specimens that there is a strong correlation between the quality of the ferroelectric hysteresis loop and the uniformity of the misfit strain in heteroepitaxial (Ba,Sr)TiO3 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 3
Copyright
Copyright © Materials Research Society 1999

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References

[1] Abe, K. and Komatsu, S., J. Appl. Phys. 77, 6461 (1995).10.1063/1.359120Google Scholar
[2] Abe, K. and Komatsu, S. in Ferroelectric Thin Films IV, and Tuttle, B. A., Desu, S. B., Ramesh, R., and Shiosaki, T. (Mater. Res. Soc. Symp. Proc. 361, Pittsburgh, PA, 1995) pp. 465–470.Google Scholar
[3] Abe, K., Komatsu, S., Yanase, N., Sano, K., and Kawakubo, T., Jpn. J. Appl. Phys. 36 5575 (1997).10.1143/JJAP.36.5575Google Scholar
[4] Abe, K., Komatsu, S., Yanase, N., Sano, K. and Kawakubo, T., Jpn. J. Appl. Phys. 36 5846 (1997).10.1143/JJAP.36.5846Google Scholar
[5] Abe, K., Yanase, N., Komatsu, S., Sano, K., Fukushima, N., and Kawakubo, T., IEICE Trans. Electron. E81–C, 505 (1998).Google Scholar
[6] Yano, Y., lijima, K., Daitoh, Y., Terashima, T., Bando, Y., Watanabe, Y., Kasatani, H. and Terauchi, H., J. Appl. Phys. 76, 7833 (1994).10.1063/1.357891Google Scholar
[7] Eom, C. B., Van Dover, R. B., Phillips, J. M., Werder, D. J., Marshall, J. H., Chen, C. H., Cava, R. J., Fleming, R. M., and Fork, D. K., Appl. Phys. Lett. 63 2570 (1993).10.1063/1.110436Google Scholar
[8] Wills, L. A. and Amano, J., in Ferroelectric Thin Films IV, and Tuttle, B. A., Desu, S. B., Ramesh, R., and Shiosaki, T. (Mat. Res. Soc. Symp. Proc. 361, Pittsburgh, PA, 1995) pp.471.Google Scholar
[9] Hall, W. H., Proc. Phys. Soc. A, 62 741 (1949).10.1088/0370-1298/62/11/110Google Scholar