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Uniform Ultra-Thin Oxides Grown by Rapid Thermal Oxidation of Silicon in N2O Ambient

Published online by Cambridge University Press:  10 February 2011

G. C. Xing ,
D. Lopes  and
G. E. Miner
G. C. Xing
Affiliation:
Applied Materials, RTP Division, 2727 Augustine Dr. Santa Clara, CA.
D. Lopes
Affiliation:
Applied Materials, RTP Division, 2727 Augustine Dr. Santa Clara, CA.
G. E. Miner
Affiliation:
Applied Materials, RTP Division, 2727 Augustine Dr. Santa Clara, CA.
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Abstract

In this paper, we report the study of rapid thermal oxidation of silicon in N2O ambient using the Applied Materials RTP Centura rapid thermal processor, and N2O oxide thickness and compositional uniformities with respect to gas flow rate and wafer rotation speed as well as other process parameters. It was found that N2O oxide uniformity is strongly dependent on gas flow rate and wafer rotation speed in addition to process pressure. With optimized setting of the process parameters, excellent oxidation uniformities (one sigma < 1%) were obtained at atmospheric pressure N2O ambient. Nitrogen concentrations of such uniform oxides grown at 1050°C atmospheric pressure N2O oxidation processes were 1.7% for a 40Å oxide and 2.5% for a 60Å oxide, respectively, as characterized by SIMS analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 361
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Hwang, H., Ting, W., Maiti, B.. Kwong, D.L., and Lee, J., Appl. Phys. Lett. 57, 3 (1990).Google Scholar
[2] Ting, W., Lo, G.Q., Ahn, J., Chu, T.Y., and Kwong, D.L., IEEE Trans. Electron Device Lett., 12, 416(1991).Google Scholar
[3] Fukuda, H., Arakawa, T., and Ohno, S., Extended Abstracts, 22nd Inter. Conf. On Solid State Devices and Materials, 159 (1990).Google Scholar
[4] Okada, Y., Tobin, P.J., Rushbrook, P., and DeHart, W.L., IEEE Trans. Electron Devices, 41, 191 (1994).Google Scholar
[5] Kobayashi, K., Teramoto, A., Nakamura, T., Watanabe, H., Kurokawa, H., Matsui, Y., and Hirayama, M., IEDM Tech. Dig. 335 (1996).Google Scholar
[6] Sun, S.C., Chen, C.H., Lou, J.C., Yen, L.W., and Lin, C.J., MRS Symposium Proc. 387, 241 (1995).Google Scholar
[7] Pomp, H.G., Woerlee, P.H., Woltjer, R., Paulzen, G., Lifka, H., Kuiper, A.E.T., IEDM Tech. Dig. 463 (1993).Google Scholar
[8] Krisch, K.S., Green, M.L., Baumann, F.H., Brasen, D., Feldman, L.C., and Manchanda, L., IEEE Tran. Electron Devices, 43, 982 (1996).Google Scholar
[9] Lin, Chuan, Chou, Anthony I., Kumar, Kiran, Chowdhury, Prasenjit, and Lee, Jack C., IEDM Tech Dig. 331 (1996).Google Scholar
[10] Carr, E., Doctorate thesis, Cornell Unversity, 1994.Google Scholar
[11] Hartig, Michael J, and Tobin, Philip J., J. Electrochem. Soc. 143, 1753 (1996).Google Scholar
[12] Chu, T.Y., Ting, W.T., Ann, J., and Kwong, D.L, J. Electrochem. Soc. 138, L13 (1991).Google Scholar
[13] Kuehne, John, and Hattangady, Sunil, RTP'96, 207 (1996).Google Scholar
[14] Mclntosh, R., Galewski, C., and Grant, J., MRS Symposium Proc. 342, 209 (1994).Google Scholar