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Ultrathin Cu Films on Mo(110) Characterized by Helium Implantation

Published online by Cambridge University Press:  01 February 2011

Vinay Venugopal  and
Barend J. Thijsse
Vinay Venugopal
Affiliation:
Department of Materials Science and Technology, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, Netherlands.
Barend J. Thijsse
Affiliation:
Department of Materials Science and Technology, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, Netherlands.
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Abstract

Point defects and thermal stability of ultrathin Cu films (3–200 Å) deposited on Mo(110) substrate at 300 K have been characterized using thermal helium desorption spectrometry (THDS). Implantation of the samples (10–100 Å Cu/Mo) with 1000 eV He+ aided in detecting He release from monovacancy in Cu films and desorption of the films (above 1200 K) from Mo substrate. A thickness dependent peak is identified in the helium desorption spectra, which is shown to be due to the process of island formation in the Cu films, using pre-implantation annealing treatments for the 40 Å film. Native defects in the films (3–200 Å) were probed using 75 eV He+ implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R10.5
Copyright
Copyright © Materials Research Society 2004

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References

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