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Two-dimensional Dopant Diffusion Study using Scanning Capacitance Microscopy

  • Guanyuan M. Yu (a1), Peter B. Griffin (a1) and James D. Plummer (a1)

Abstract

The results of a two-dimensional dopant diffusion study using two new sample preparation techniques and a database-driven deconvolution technique are presented. These techniques are applied to real devices to justify complex implantation and diffusion models. It will be shown that the dose loss behavior is not uniform along the silicon/oxide interface from the source/drain region to the channel region. A new non-uniform dose loss model is proposed and used to explain the experimental results.

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Two-dimensional Dopant Diffusion Study using Scanning Capacitance Microscopy

  • Guanyuan M. Yu (a1), Peter B. Griffin (a1) and James D. Plummer (a1)

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