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Thickness Dependence and Electrical Properties of Ultrathin PZT Films Grown on SrRuO3/SrTiO3 by MOCVD

Published online by Cambridge University Press:  10 February 2011

M. Shimizu ,
H. Fujisawa  and
H. Niu
M. Shimizu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan. mshimizu@elnics.eng.himeji-tech.ac.jp
H. Fujisawa
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan.
H. Niu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan.
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Abstract

Epitaxial Pb(Zr,Ti)O3 (PZT) thin films with various thicknesses ranging from 40 to 400nm were prepared on SrRuO3/SrTiO3 by metalorganic chemical vapor deposition (MOCVD). The dependence of lattice constant on the film thickness and temperature was examined. The PZT films obtained showed ferroelectric hysteresis loops even when film thickness was 40nm. Applied voltage for obtaining high polarization density decreased as film thickness decreased. The 40nm-thick PZT film had the polarization density (Pr) of 38mC/cm2 at an applied voltage (Vc) of 0.7V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 259
Copyright
Copyright © Materials Research Society 2000

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