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Thermal Desorption of Hydrogen in Si and Sic Nanoparticles Produced by Plasma-Enhanced Chemical-Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

J. Costa ,
J. Fort ,
J. J. Suñol ,
P. Roura ,
G. Viera  and
E. Bertran
J. Costa
Affiliation:
GRM, Universitat de Girona, Avda. Lluís Santaló s/n, E-17071 Girona, Catalonia, Spain
J. Fort
Affiliation:
GRM, Universitat de Girona, Avda. Lluís Santaló s/n, E-17071 Girona, Catalonia, Spain
J. J. Suñol
Affiliation:
GRM, Universitat de Girona, Avda. Lluís Santaló s/n, E-17071 Girona, Catalonia, Spain
P. Roura
Affiliation:
GRM, Universitat de Girona, Avda. Lluís Santaló s/n, E-17071 Girona, Catalonia, Spain
G. Viera
Affiliation:
Departament de Física Aplicada i Òptica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona, Catalonia, Spain
E. Bertran
Affiliation:
Departament de Física Aplicada i Òptica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona, Catalonia, Spain
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Abstract

Mass spectrometry and calorimetry experiments on hydrogen evolution in amorphous Si:H and SiC:H nanoparticles grown by Plasma-Enhanced Chemical-Vapor Deposition (PECVD) are reported. The evolution spectra in a-Si particles are very similar to those found in films. The dynamic constants of the low-temperature peak confirm that this process is the same as in films. It is argued that the high-temperature process may not be diffusion-controlled. Both processes are exothermic, indicating that most dangling bonds recombine after H-desorption. The Hevolution in SiC occurs at higher temperatures than in Si. The process is endothermic.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 427
Copyright
Copyright © Materials Research Society 1998

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References

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