Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-23T18:59:09.528Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal and Collisional Effects on the Intrinsic Stress in Nitride Layers Deposited by Ion-Beam Based Techniques

Published online by Cambridge University Press:  25 February 2011

M.A. Djouadi  and
D. BOUCHIER
M.A. Djouadi
Affiliation:
Institut d'Electronique Fondamentale, Université Paris-Sud, bat.220, F-91405 Orsay (France)
D. BOUCHIER
Affiliation:
Institut d'Electronique Fondamentale, Université Paris-Sud, bat.220, F-91405 Orsay (France)
Get access

Abstract

In IBAD BN and RIBSD Si3N4 layers deposited at room temperature, the internal stress can always be reduced below -1 GPa by a post-deposition annealing. When the deposition temperature is increased up to 600°C, the stress in Si3N4 layers is not significantly reduced and, in IBAD BN films, it is even greater than expected from the development of the thermal stress, which indicates that no relaxation of the stress occurs during deposition. This implies that the spatial extent of the ion peening effect may largely exceed the penetration depth of ions and of recoil atoms in the solid. In order to confirm this hypothesis, sequences of deposition/in situ annealing/deposition have been performed. In RIBSD films, the relaxation of the annealed sublayer can be observed. In IBAD films, the deposition of the upper layer results in an increase of the stress in the superficial zone of the annealed sublayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 185
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Weissmantel, C. in Thin films from free atoms and particles, Ed. Klabunde, K.J., Academic Press,Orlando, 1985, p.153 Google Scholar
2) Thornton, A. and Hoffman, D.W., Thin Solid Films, 171 (1989) 5–31 CrossRefGoogle Scholar
3) D'Heurle, F.M. and Harper, J.M.E., Thin Solid Films, 171 (1989) 81–92 Google Scholar
4) Adams, A.C. and Capio, C.D., J. Electroch. Soc., 127 (1980), 399 Google Scholar
5) Rother, B., Zscheile, H.D., Weissmantel, C., Heiser, C., Holzhuter, G., Leonhardt, G. and Reich, P., Thin Solid Films, 142 (1986) 83–99 Google Scholar
6) Mitterer, C., Rödhammer, P., Störi, H. and Jeglitsch, F., J.Vac.Sci.Technol. A7 (1989) 2646 Google Scholar
7) Stambouli, V., Bouchier, D., Burat, O. and Gautherin, G., Surface and Coatings Technology, 43/44 (1990) 137–144 Google Scholar
8) Windischmann, H., J. Appl. Phys., 62 (1987) 1800 Google Scholar
9) Fourrier, A., Bosseboeuf, A., Bouchier, D. and Gautherin, G., Jpn. J.Appl. Phys, 30, 1469–1474 (1991)CrossRefGoogle Scholar
10) Burat, O., Bouchier, D., Stambouli, V. and Gautherin, G., J. Appl. Phys., 68 (1990) 2780 Google Scholar
11) Leroy, B., in Instabilities in Silicon Devices, Eds. Barbotin, G. and Vapaille, A. (North Holland, Amsterdam, 1986), Vol 1, p. 159 Google Scholar
12) Stambouli, V., University Thesis, Universitd Paris XI, Orsay, March 1991 Google Scholar
13) Rabinzohn, P., Gautherin, G., Agius, B. and Cohen, C., J. Electrochem. Soc., 131 (1991) 905 CrossRefGoogle Scholar