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TEM and PL characterisation of MBE-grown epitaxial GaN/GaAs

Published online by Cambridge University Press:  15 February 2011

Yan Xin ,
P. D. Brown ,
C. B. Boothroyd ,
A. R. Preston ,
C. J. Humphreys ,
T. S. Cheng ,
C. T. Foxon ,
A. V. Andrianov  and
J. W. Orton
Yan Xin
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
P. D. Brown
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
C. B. Boothroyd
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
A. R. Preston
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
C. J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
T. S. Cheng
Affiliation:
Department of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD, UK.
C. T. Foxon
Affiliation:
Department of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD, UK.
A. V. Andrianov
Affiliation:
Department of Electrical and Electronic Engineering, University of Nottingham, University Park, Nottingham, NG7 2RD, UK.
J. W. Orton
Affiliation:
Department of Electrical and Electronic Engineering, University of Nottingham, University Park, Nottingham, NG7 2RD, UK.
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Abstract

MBE-grown epitaxial GaN deposited at 700°C on {001}, {111}A and B GaAs has been characterised using the combined techniques of transmission electron microscopy (TEM) and photoluminescence (PL). On both { 111 } A and 111 B GaAs substrates, single crystal wurtzite GaN was formed, but with very high densities of threading defects. Best epitaxy occurred on 111B GaAs in accordance with PL measurements. An amorphous phase was identified at the GaN/{ 111 }A GaAs interface and the GaN epilayer evolved in this instance with the same Nterminated growth surface as for the case of growth on 111 B GaAs, as determined by convergent beam electron diffraction (CBED). Growth on {001} GaAs produced highly faulted columnar grains of zincblende GaN. Conversely, growth on {001} GaAs under an additional arsenic flux at 700°C resulted in the deposition of single crystal zincblende GaN with a high density of stacking faults and microtwins. Thus, the microstructure of epitaxial GaN depends very much on the detailed growth conditions and substrate orientations used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 311
Copyright
Copyright © Materials Research Society 1996

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