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Synthesis and Properties of GaAs Nanocrystals in Sio2 Formed by Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Jane G. Zhu ,
C. W. White ,
D. J. Wallis ,
J. D. Budai  and
S. P. Withrow
Jane G. Zhu
Affiliation:
jgzhu@solid.ssd.ornl.gov
C. W. White
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831-6057 D. O. HENDERSON, Fisk University, Physics Department, Nashville, TN 37208
D. J. Wallis
Affiliation:
University of Illinois at Chicago, Physics Department, Chicago, IL 60607
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831-6057 D. O. HENDERSON, Fisk University, Physics Department, Nashville, TN 37208
S. P. Withrow
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831-6057 D. O. HENDERSON, Fisk University, Physics Department, Nashville, TN 37208
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Abstract

GaAs nanocrystals have been formed by the sequential ion implantation method. The sequence of Ga and As ion implantation (i.e., Ga + As or As + Ga) is found to affect the size distributions of GaAs nanocrystals significantly. The nanocrystal sizes are much bigger in the samples with Ga implanted first than those with As implanted first. This phenomenon is explained by the different diffusion behaviors of Ga and As species. Different precipitate regions have been observed in the samples implanted with Ga first and then As. Optical absorption measurements show that Ga particles have already formed in the as-implanted stage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 447
Copyright
Copyright © Materials Research Society 1996

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References

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