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Surface Processes which Control the Deposition and Etching in the Sih4/H2/Si(S)-Glow Discharge System: The Competition Between Atoms, Ions and Electronics

Published online by Cambridge University Press:  26 February 2011

Stan Vepřek ,
Günter Ratz ,
Klaus Meindl  and
Wolfhard Möler
Stan Vepřek
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenberg Straße, D-8046 Garching/ Munich, Fed. Rep. Germany
Günter Ratz
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenberg Straße, D-8046 Garching/ Munich, Fed. Rep. Germany
Klaus Meindl
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenberg Straße, D-8046 Garching/ Munich, Fed. Rep. Germany
Wolfhard Möler
Affiliation:
Max-Planck-Institute for Plasma Physics, Boltzmann Straße, D-8046 Garching/ Munich, Fed. Rep. Germany
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Abstract

Depending on the glow discharge conditions, silicon can be either deposited or etched in the SiH4/H2/Si(s)-system. At floating potential and close to the Partial Chemical Equilibrium (PCE), the etching<--> deposition process is controlled by the temperature of the sample which, in turn, determines the local departure of the system from the PCE. At a constant temperature and under PCE-conditions, low energy ion and electron bombardment of the surface promotes the deposition and etching, respectively. At ion energies above the threshold for displacement damage, decrease of the deposition and etch yield is observed. A possible mechanistic explanation is suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 19
Copyright
Copyright © Materials Research Society 1991

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References

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