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Surface Oxidation of Si (111) By High Purity Ozone and Negative Ions Produced by Rydberg Electron Transfer

Published online by Cambridge University Press:  10 February 2011

H. Nonaka ,
A. Kurokawa ,
K. Nakamura  and
S. Ichimura
H. Nonaka
Affiliation:
Electrotechnical Laboratory, 1‐1‐4 Umezono, Tsukuba, Ibaraki 305 Japan *e8610@etl.go.jp
A. Kurokawa
Affiliation:
Electrotechnical Laboratory, 1‐1‐4 Umezono, Tsukuba, Ibaraki 305 Japan
K. Nakamura
Affiliation:
Electrotechnical Laboratory, 1‐1‐4 Umezono, Tsukuba, Ibaraki 305 Japan
S. Ichimura
Affiliation:
Electrotechnical Laboratory, 1‐1‐4 Umezono, Tsukuba, Ibaraki 305 Japan
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Abstract

The sub‐initial oxidation of Si (111) surface by a high‐flux pure ozone was investigated using X‐ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high‐flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 53
Copyright
Copyright © Materials Research Society 1997

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References

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