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Surface Oxidation of Si (111) By High Purity Ozone and Negative Ions Produced by Rydberg Electron Transfer

  • H. Nonaka (a1) (a2), A. Kurokawa (a1), K. Nakamura (a1) and S. Ichimura (a1)


The sub‐initial oxidation of Si (111) surface by a high‐flux pure ozone was investigated using X‐ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high‐flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.



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2 2Nakamura, K., Kurokawa, A. and Ichimura, S., Surf. Interface Anal., in press.
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9 9Novick, S.E., Engelking, P.C., Jones, P.L., Futrell, J.H., and Lineberger, W.C., J. Phys. Chem., 70, 2652 (1979).


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