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Surface Dynamics of GaAs Thin Film Formation by Pulsed Laser Deposition Investigated Using RHEED

Published online by Cambridge University Press:  11 February 2011

A. Pun ,
S.M. Durbin ,
J. Kennedy ,
A. Markwitz ,
R. Reeves  and
J.P. Zheng
A. Pun
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
S.M. Durbin
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, NEW ZEALAND
J. Kennedy
Affiliation:
Institute of Geological & Nuclear Sciences, Lower Hutt, NEW ZEALAND
A. Markwitz
Affiliation:
Institute of Geological & Nuclear Sciences, Lower Hutt, NEW ZEALAND
R. Reeves
Affiliation:
Department of Physics & Astronomy, University of Canterbury, NEW ZEALAND
J.P. Zheng
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
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Abstract

Post-growth surface dynamics of epitaxial GaAs (100) thin films grown by pulsed laser deposition (PLD) have been studied using dynamic reflection high-energy electron diffraction (RHEED) in an effort to better understand the growth mechanisms present in pulsed laser deposition. Results have indicated, as expected, that processes occurring at reduced substrate temperatures manifest themselves more slowly than at elevated temperatures. This has been shown through the analysis of static RHEED images and dynamic specular beam intensity as well as profile scans.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W17.10
Copyright
Copyright © Materials Research Society 2003

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References

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