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Sulfurized Passivation of GaAs (100) Surfaces

  • Z. S. Li (a1), X. Y. Hou (a1), W. Z. Cai (a1), W. Wang (a1), M. Zhang (a1), G. S. Dong (a1), X. Jin (a1) and Xun Wang (a1)...

Abstract

We have developed a new electrochemical passivation method to obtain a quite stable sulfide layer on GaAs surface. This layer is very thick and contains a mixture of Ga, As, S, O and H compounds. The photoluminescence (PL) spectrum of such anodic sulfurized GaAs surface shows big intensity enhancement as compared with that of as-etched GaAs samples; No visual intensity decay occurs under laser beam illumination, which maintains for more than seven months. The structure and composition of the passivation layers are investigated by the X-ray photoelectron spectroscopy and the mechanism of the layer formation is suggested.

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Sulfurized Passivation of GaAs (100) Surfaces

  • Z. S. Li (a1), X. Y. Hou (a1), W. Z. Cai (a1), W. Wang (a1), M. Zhang (a1), G. S. Dong (a1), X. Jin (a1) and Xun Wang (a1)...

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