Published online by Cambridge University Press: 01 February 2011
CeO2 thin films were irradiated with 200MeV Xe ions. Effects of the irradiation were studied by using Extended X-ray Absorption Fine Structure (EXAFS) measurement at SPring8 synchrotron radiation facility. EXAFS spectra for the irradiated thin films near the Ce K-edge show that the coordination number for oxygen atoms around Ce atom decreases and that the Ce-O Debye-Waller factor increases by the irradiation. The atomic distance between oxygen atom and Ce atom does not vary within the accuracy of EXAFS measurement. The effect of high density electronic excitation on the structure of CeO2 is discussed.