Hostname: page-component-5c6d5d7d68-thh2z Total loading time: 0 Render date: 2024-09-01T09:22:55.293Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Defects in InSb Quantum Wells Grown on GaAs (001) Substrates via Al0.09In0.91Sb/GaSb-AlSb Strained Layer Superlattice/AlSb/GaSb Buffer Layers

Published online by Cambridge University Press:  01 February 2011

Tetsuya D. Mishima ,
Madhavie Edirisooriya  and
Michael B. Santos
Tetsuya D. Mishima
Affiliation:
mishima@ou.edu, University of Oklahoma, Physics & Astronomy, 440 W. Brooks, Norman, OK, 73019, United States, 405-325-3961, 405-325-7557
Madhavie Edirisooriya
Affiliation:
madhavie@ou.edu, University of Oklahoma, Dept. of Physics & Astronomy, United States
Michael B. Santos
Affiliation:
santos@nhn.ou.edu, University of Oklahoma, Dept. of Physics & Astronomy, United States
Get access

Abstract

Structural defects in InSb quantum well (QW) samples have been investigated by transmission electron microscopy (TEM). Using molecular beam epitaxy, an InSb QW with remotely-doped Al0.09In0.91Sb barriers was grown on a GaAs (001) substrate with buffer layers consisting of, in order from the substrate: 1 μm of GaSb, 1 μm of AlSb, 50 nm of GaSb-AlSb strained layer superlattice (SLS), and 3 μm of Al0.09In0.91Sb. Cross-sectional TEM analysis indicates that high densities of threading dislocations (TDs) are created at the two highly lattice-mismatched interfaces, the Al0.09In0.91Sb/GaSb-AlSb SLS and the GaSb/GaAs interfaces. Pairs of stereo images taken from plan-view TEM (PV-TEM) specimens show that TDs propagate through the InSb QW layer. The densities of TDs and micro-twin (MT) defects measured by PV-TEM are 9×108/cm2 and 4×103/cm, respectively. These values are worse than those in an InSb QW layer grown with a different buffer layer by a factor of ∼4. The different buffer layer contains an InSb interlayer that effectively filters out both TDs and MTs. Adopting an interlayer structure and reducing the GaSb and AlSb layer thickness may make it possible to fabricate a lower-defect-density yet thinner InSb QW sample with the type of buffer layer examined in this study.

Keywords

transmission electron microscopy (TEM)defectsIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE01-11
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Khodaparast, G.A., Doezema, R.E., Chung, S.J., Goldammer, K.J., and Santos, M.B., Phys. Rev. B 70, 155322 (2004).Google Scholar
2. Ashley, T., Barnes, A.R., Buckle, L., Datta, S., Dean, A.B., Emeny, M.T., Fearn, M., Hayes, D.G., Hilton, K.P., Jefferies, R., Martin, T., Nash, K.J., Phillips, T.J., Tang, W.H.A., Wilding, P.J., and Chau, R., The 7th International Conference on Solid-State and Integrated Circuit Technology (2004).Google Scholar
3. Solin, S.A., Hines, D.R., Rowe, A.C.H., Tsai, J.S., Pashkin, Yu.A., Chung, S.J., Goel, N., and Santos, M.B., Appl. Phys. Lett. 80, 4012 (2002).Google Scholar
4. Goel, N., Chung, S.J., Santos, M.B., Suzuki, K., Miyashita, S., and Hirayama, Y., Physica E 21, 716 (2004).Google Scholar
5. Mishima, T.D. and Santos, M.B., J. Vac. Sci. Technol. B 22, 1472 (2004).Google Scholar
6. Li, L.K., Hsu, Y., and Wang, W.I., J. Vac. Sci. Technol. B 11, 872 (1993).Google Scholar
7. Partin, D.L., Hermans, J., and Thrush, C.M., J. Vac. Sci. Technol. B 17, 1267 (1999).Google Scholar
8. Weng, X., Rudawski, N.G., Wang, P.T., Goldman, R.S., Partin, D.L., and Heremans, J., J. Appl. Phys. 97, 43713 (2005).Google Scholar
9. Mishima, T.D., Keay, J.C., Goel, N., Ball, M.A., Chung, S.J., Johnson, M.B., and Santos, M.B., J. Cryst. Growth 251, 551 (2003).Google Scholar
10. Mishima, T.D., Keay, J.C., Goel, N., Ball, M.A., Chung, S.J., Johnson, M.B., and Santos, M.B., Physica E 20, 260 (2004).Google Scholar
11. Mishima, T.D., Keay, J.C., Goel, N., Ball, M.A., Chung, S.J., Johnson, M.B., and Santos, M.B., J. Vac. Sci. Technol. B 23, 1171 (2005).Google Scholar
12. Edington, J.W., Practical Electron Microscopy in Materials Science, (Van Nostrand Reinhold Company, 1976), p. 120.Google Scholar