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Strain Distribution in Heterolayers with low Misfit as Revealed by Convergent Beam Illumination Methods

Published online by Cambridge University Press:  25 February 2011

Zuzanna Ljjleental-Weber ,
T. Kaneyama ,
M. Terauchi  and
M. Tanaka
Zuzanna Ljjleental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, 1 Cyclotron Rd., Berkeley, CA 94720
T. Kaneyama
Affiliation:
JEOL LTD, Japan
M. Terauchi
Affiliation:
Institute for Scientific Measurements, Tohoku University, Sendai, 980, Japan
M. Tanaka
Affiliation:
Institute for Scientific Measurements, Tohoku University, Sendai, 980, Japan
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Abstract

Convergent beam electron diffraction (CBED) was applied to the local measurement of lattice parameter across a strained interface with small mismatch. GaAs layers grown at low temperature with excess As (with 0.15% misfit) on a GaAs substrate were chosen for these studies. Tetragonal distortion was detected in the layer up to 0.5μm from the interface. With an increase of the layer thickness lowering of the symmetry of these CBED patterns was observed. This lowering of symmetry is most probably due to saturation of As solubility and the strain build into these layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 421
Copyright
Copyright © Materials Research Society 1993

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References

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