Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-17T23:32:21.174Z Has data issue: false hasContentIssue false
  • English
  • Français

Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation

Published online by Cambridge University Press:  17 March 2011

Alexandre Cuenat  and
Michael J. Aziz
Alexandre Cuenat
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
Michael J. Aziz
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
Get access

Abstract

We study the formation and self-organization of “ripples” and “dots” spontaneously appearing during uniform irradiation of Si, Ge, and GaSb with energetic ion beams. Features have been produced both with sub-keV unfocused Ar+ ions and with a 30 keV Ga+ Focused Ion Beam. We follow the evolution of features from small amplitude to “nanospikes” with increasing ion dose. It appears that the edge of the sputtered region influences the patterns formed, an effect that may make it possible to guide the self-organization by the imposition of lateral boundary conditions on the sputter instability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N2.8
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Navez, M., Chaperot, D., and Sella, C.. Comptes Rendus Academie des Sciences, 1962. 254(2): p. 240.Google Scholar
2. Carter, G. and Vishnyakov, V.. Phys. Rev. B, 1996. 54: p. 17647.Google Scholar
3. Erlebacher, J.D. and Aziz, M.J.. Mater. Res. Soc. Symp. Proc., 1997. 440: p. 461.Google Scholar
4. Facsko, S., Dekorsy, T., Koerdt, C.et al.. Science, 1999. 285(5433): p. 1551.Google Scholar
5. Frost, F., Schindler, A., and Bigl, F.. Phys. Rev. Lett., 2000. 85(19): p. 4116.Google Scholar
6. Rusponi, S., Boragno, C., and Valbusa, U.. Phys. Rev. Lett., 1997. 78: p. 2795.Google Scholar
7. Mayer, T.M., Chason, E., and Howard, A.J.. J. Appl. Phys., 1994. 76: p. 1633.Google Scholar
8. Bradley, R.M. and Harper, J.M.. J. Vac. Sci. Technol. A, 1988. 6: p. 2390.Google Scholar
9. Erlebacher, J., Aziz, M., Chason, E.et al.. Phys. Rev. Lett., 1999. 82(11): p. 2330.Google Scholar
10. Erlebacher, J., Aziz, M.J., Chason, E.et al.. J. Vac. Sci. Technol. A, 2000. 18(1): p. 115.Google Scholar
11. Habenicht, S., Bolse, W., Lieb, K.P.et al.. Phys. Rev. B, 1999. 60(4): p. R2200.Google Scholar
12. Cuerno, R., Makse, H.A., Tomassone, S.et al.. Phys. Rev. Lett., 1995. 75(24): p. 4464.Google Scholar
13. Gago, R., Vazquez, L., Cuerno, R.et al.. Appl. Phys. Lett., 2001. 78(21): p. 3316.Google Scholar
14. Appleton, B.R., Holland, O.W., Narayan, J.et al.. Appl. Phys. Lett., 1982. 41(8): p. 711.Google Scholar
15. Chason, E., Erlebacher, J., Aziz, M.J.et al.. Nucl. Instr. Meth. B, 2001. 178: p. 55.Google Scholar