Skip to main content Accessibility help
×
Home

Single Crystal Epitaxial Ge Based Contacts to Gaas, and InGap

  • M. Dubey (a1), K.A. Jones (a1), L.M. Casas (a1), D. Eckart (a1) and R.L. Pfeffer (a1)...

Abstract

Nonalloyed, single crystal, oxide free Ge based ohmic contacts are almost atomically abrupt, have a smooth interface, and have the potential to be better understood. Ultra high vacuum electron beam evaporation is used to deposit a single crystal Ge film on GaAs and InGaP substrates. A large grain, highly oriented Au film or a poly crystalline Pd film with more randomly oriented grains was then deposited on the Ge. These films were characterized in the as grown condition by high resolution electron microscopy (HREM), double crystal x-ray diffraction (DXRD), Auger electron spectroscopy (AES), Rutherford back scattering (RBS) and scanning electron microscopy (SEM). The as deposited Ge film grown at 400°C on GaAs and at 350°C on InGaP are epitaxial with a smooth abrupt, oxide free interface. The highly oriented Au film deposited at 100°C had a smooth interface with the Ge with the orientation relationship (100)Au II (100)Ge and [001]Au II [011 ]Ge or [0-1 1 ]Ge.

Copyright

References

Hide All
1 Aina, O., Katz, W., Baliga, B.J., and Rose, K., J. Appl. Phys. 53, 777 (1982).
2 Werthen, J.G. and Scifres, D.R., J. Appl. Phys. 52, 1127 (1981).
3 Kirchner, P.D., Jackson, T.N., Pettit, G.D., and Woodall, J.M., Appl. Phys. Lett. 47, 26 (1985).
4 Barnes, P.A. and Cho, A.Y., Appl. Phys. Lett. 33, 651 (1978)
5 Devlin, W.J., Wood, C.E.C., Stall, R., and Eastman, L.F., Soild St. Elctron. 23, 823 (1980).
6 Stall, R.A., Wood, C.E.C., Board, K., Dandekar, N., Eastman, L.F., and Devlin, J., J. Appl. Phys. 52, 4062 (1981).
7 Lee, H.S., Lareau, R.T., Schauer, S.N., Moerkirk, R.P., Jones, K.A., Elagoz, S., Vavra, W., and R, Clarke in Advanced III-V Compound Semiconductor Growth, Processing and Devices, edited by Pearton, S.J., Sadana, D.K., and Zavda, J.M. (Mater. Res. Soc. Proc. 240, Pittsburgh, PA, 1992) pp. 473478.
8 Ren, F., Pearton, S.J., Fullowan, T.R., Hobson, W.S., Chu, S.N.G., and Emerson, A.B. in Advanced III-V Compound Semiconductor Growth, Processing and Devices, edited by Pearton, S.J., Sadana, D.K., and Zavda, J.M. (Mater. Res. Soc. Proc. 240, Pittsburgh, PA, 1992) pp.417424.
9 Kim, T., and CHUNG, D.D.L., J. Vacuum Sci. Technol. B4, 762 (1986).

Single Crystal Epitaxial Ge Based Contacts to Gaas, and InGap

  • M. Dubey (a1), K.A. Jones (a1), L.M. Casas (a1), D. Eckart (a1) and R.L. Pfeffer (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed