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Single Crystal Epitaxial Ge Based Contacts to Gaas, and InGap

Published online by Cambridge University Press:  25 February 2011

M. Dubey ,
K.A. Jones ,
L.M. Casas ,
D. Eckart  and
R.L. Pfeffer
M. Dubey
Affiliation:
Army Research Lab, EPSD AMSRL-EP-EC Fort Monmouth, NJ 07703-5601
K.A. Jones
Affiliation:
Army Research Lab, EPSD AMSRL-EP-EC Fort Monmouth, NJ 07703-5601
L.M. Casas
Affiliation:
Army Research Lab, EPSD AMSRL-EP-EC Fort Monmouth, NJ 07703-5601
D. Eckart
Affiliation:
Army Research Lab, EPSD AMSRL-EP-EC Fort Monmouth, NJ 07703-5601
R.L. Pfeffer
Affiliation:
Army Research Lab, EPSD AMSRL-EP-EC Fort Monmouth, NJ 07703-5601
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Abstract

Nonalloyed, single crystal, oxide free Ge based ohmic contacts are almost atomically abrupt, have a smooth interface, and have the potential to be better understood. Ultra high vacuum electron beam evaporation is used to deposit a single crystal Ge film on GaAs and InGaP substrates. A large grain, highly oriented Au film or a poly crystalline Pd film with more randomly oriented grains was then deposited on the Ge. These films were characterized in the as grown condition by high resolution electron microscopy (HREM), double crystal x-ray diffraction (DXRD), Auger electron spectroscopy (AES), Rutherford back scattering (RBS) and scanning electron microscopy (SEM). The as deposited Ge film grown at 400°C on GaAs and at 350°C on InGaP are epitaxial with a smooth abrupt, oxide free interface. The highly oriented Au film deposited at 100°C had a smooth interface with the Ge with the orientation relationship (100)Au II (100)Ge and [001]Au II [011 ]Ge or [0-1 1 ]Ge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 601
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Aina, O., Katz, W., Baliga, B.J., and Rose, K., J. Appl. Phys. 53, 777 (1982).Google Scholar
2 Werthen, J.G. and Scifres, D.R., J. Appl. Phys. 52, 1127 (1981).Google Scholar
3 Kirchner, P.D., Jackson, T.N., Pettit, G.D., and Woodall, J.M., Appl. Phys. Lett. 47, 26 (1985).Google Scholar
4 Barnes, P.A. and Cho, A.Y., Appl. Phys. Lett. 33, 651 (1978)Google Scholar
5 Devlin, W.J., Wood, C.E.C., Stall, R., and Eastman, L.F., Soild St. Elctron. 23, 823 (1980).CrossRefGoogle Scholar
6 Stall, R.A., Wood, C.E.C., Board, K., Dandekar, N., Eastman, L.F., and Devlin, J., J. Appl. Phys. 52, 4062 (1981).Google Scholar
7 Lee, H.S., Lareau, R.T., Schauer, S.N., Moerkirk, R.P., Jones, K.A., Elagoz, S., Vavra, W., and R, Clarke in Advanced III-V Compound Semiconductor Growth, Processing and Devices, edited by Pearton, S.J., Sadana, D.K., and Zavda, J.M. (Mater. Res. Soc. Proc. 240, Pittsburgh, PA, 1992) pp. 473–478.Google Scholar
8 Ren, F., Pearton, S.J., Fullowan, T.R., Hobson, W.S., Chu, S.N.G., and Emerson, A.B. in Advanced III-V Compound Semiconductor Growth, Processing and Devices, edited by Pearton, S.J., Sadana, D.K., and Zavda, J.M. (Mater. Res. Soc. Proc. 240, Pittsburgh, PA, 1992) pp.417–424.Google Scholar
9 Kim, T., and CHUNG, D.D.L., J. Vacuum Sci. Technol. B4, 762 (1986).Google Scholar