Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-24T01:18:33.341Z Has data issue: false hasContentIssue false
  • English
  • Français

Simulation and Modeling of Amorphous Silicon Thin-Film Devices

Published online by Cambridge University Press:  26 February 2011

John G. Shaw  and
Mike G. Hack
John G. Shaw
Affiliation:
Xerox Corporation, Design Research Institute, Cornell University, Ithaca, NY 14853
Mike G. Hack
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Get access

Abstract

We describe a computer program which solves the complete set Of transport equations for device-quality amorphous silicon in two spatial dimensions and time. When modeling amorphous silicon devices, it is extremely important to account for the high concentration of time-dependent trapped charge present due to the continuous distribution of localized states in the semiconductor's bandgap. Our model is based on a realistic density-of-states distribution and includes a detailed description of the trap occupation functions for electrons and holes. These occupation functions are calculated self-consistently with respect to the electrostatic potential and free-carrier concentrations within the semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 278: Symposium W – Computational Methods in Materials Science , 1992 , 127
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Thompson, M. J. and Tuan, H. C., IEDM Tech. Dig., 192 (1986).Google Scholar
2. Tuan, H. C., Mater. Res.Soc. Proc. 70,651 (1986).CrossRefGoogle Scholar
3. Shaw, J. G. et al. , J. Non-Cryst. Solids. 137&138, 1233 (1990).Google Scholar
4. Shaw, J. G. and Hack, M., J. Appl. Phys. 64, 4562 (1988).CrossRefGoogle Scholar
5. Shaw, J. G. and Hack, M., J. Appl. Phys. 65, 2124 (1989).CrossRefGoogle Scholar
6. Shaw, J. G. and Hack, M., J. Appl. Phys. 67, 1576 (1990).CrossRefGoogle Scholar
7. Shaw, J. G., Hack, M., and Martin, R. A., J. Appl. Phys. 69,2667 (1991).CrossRefGoogle Scholar
8. Read, W. T. and Shockley, W., Phys. Rev. B 87,835 (1952).Google Scholar
9. Sze, S. M., Physics of Semiconductor Devices, (Wiley, New York, 1981), p. 17.Google Scholar
10. Hack, M. et al. , Jap. J. Appl. Phys. 29, L2360 (1990).CrossRefGoogle Scholar
11. Street, R. A., J. Non-Cryst. Solids 77&78, 1 (1985).CrossRefGoogle Scholar