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Simulation and Modeling of Amorphous Silicon Thin-Film Devices

Published online by Cambridge University Press:  26 February 2011

John G. Shaw  and
Mike G. Hack
John G. Shaw
Affiliation:
Xerox Corporation, Design Research Institute, Cornell University, Ithaca, NY 14853
Mike G. Hack
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

We describe a computer program which solves the complete set Of transport equations for device-quality amorphous silicon in two spatial dimensions and time. When modeling amorphous silicon devices, it is extremely important to account for the high concentration of time-dependent trapped charge present due to the continuous distribution of localized states in the semiconductor's bandgap. Our model is based on a realistic density-of-states distribution and includes a detailed description of the trap occupation functions for electrons and holes. These occupation functions are calculated self-consistently with respect to the electrostatic potential and free-carrier concentrations within the semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 278: Symposium W – Computational Methods in Materials Science , 1992 , 127
Copyright
Copyright © Materials Research Society 1992

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