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Simox Material Development for Sub-0.25µm Cmos Technology

Published online by Cambridge University Press:  22 February 2011

D.K. Sadana ,
H.J. Hovel ,
J.L. Frecouf ,
S.F. Chu  and
T.J. Watson
D.K. Sadana
Affiliation:
IBM SRDC
H.J. Hovel
Affiliation:
IBM SRDC
J.L. Frecouf
Affiliation:
IBM SRDC
S.F. Chu
Affiliation:
IBM SRDC
T.J. Watson
Affiliation:
Research Center Yorktown Heights, NY 10598
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Abstract

Advantages of SOI materials for CMOS technology arc discussed. The lending SOI materials for CMOS applications appear to be SIMOX and BSOl presently. Progress made in two types of SIMOX, namely, standard and thin BOX. is presented. Recent results from 200mm SIMOX are included. Finally, various defects in annealed SIMOX are discussed. An effort has been made to present data which is typical of commercial SIMOX.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 699
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Omura, Y. and Izumi, K., SiJicon-on-Insulator Tech & Devices, ECS Proc. 90–6, 509 (1990).Google Scholar
2 Shahidi, G. et al. , VLSI Tech Digest, pp27 (1993).Google Scholar
3 Sadana, D.K., Hovel, H.J., Frccouf, J.L., Latzko, K.F. and Omits, B., 1993 I REE Intern SOI Conf Proc, Late News PaperGoogle Scholar
4 Nakashima, S., Omura, Y. and Izumi, K., Silicon-on-Insulator Tech and Devices, ECS Proc. 92–13, 358(1992).Google Scholar
5 Li, Y., Kilner, J.A., Chater, R.J., Hcmment, P.L.F., Ncjim, A., Robinson, A.K., Reeson, K.J., Marsh, C.D. and Booker, G.R., ibid, p368.Google Scholar
6 Sadana, D.K., Hovel, H.J., Frccouf, J.L., Chu, S.F. and McFarlnnif, P.A., 1993 IEEE Intern SOI Conf Proc, pp16-17, (1993).Google Scholar
7 Meyyappan, N. and Nakato, T., 1993 IEEE Intern SOI Conf Proc, Laic News Paper.Google Scholar
8 Davari, B. et al. , IEDM Tech Digest, pp 56 (1988).Google Scholar
9 Davari, B., Hovel, H.J. and Shahidi, G., 1993 IEEE Intern SOI Conf Proc, pp4-5, (1993).Google Scholar
10 Davari, B., Chang, W.H., Pctrillo, K.E., Wong, C.Y., Moy, D., Taur, Y. Wordeman, M.R., Hsu, C.C.H., and Polcari, M.R., IEEE Trans on Electron Dew 39, 967 (1992).Google Scholar
11 Shahidi, G., IBM Research, Yorktovvn Heights, NY (private communicalion)Google Scholar
12 Hosak, H., Texas Instruments, this proceeding.Google Scholar
13 Cohn, L., Hosak, H., Chcrnc, R,. and Fechncr, P., 1993 IEEE Intern SOI Conf Proc, pp 158-159, (1993).Google Scholar
14 Iyer, S.S., Tejwani, M.J., Pitncr, P.M., Scdgwick, T.O. and Shahidi, G.G., 1993 IEEE Intern SOI Conf Proc, pp 134-135, (1993).Google Scholar
15 Cellcr, G.K., 6th Intern Symp on Si Mats Scί Tech, ECS Proc. 90–7, 472 (1990).Google Scholar
16 Guerra, M.A., Silicon-on-Insulator Tech and Devices, ECS Proc. 90–6. 21 (1990).Google Scholar
17 Auberton-Hervc, A.J., ibid, p455 Google Scholar
18 Cordts, B., IBIS Corp, Danvers, MA (Private Communication).Google Scholar
19 Lee, J.D., Park, J.C., Vcnablcs, D., Krause, S.J. and Roitman, P., this proceeding.Google Scholar
20 Zhou, D.S. and Holland, O.W., this proceeding.Google Scholar
21 Visitserngtrakul, S., Jung, C.O., Ravi, T.S., Cordts, B., Burke, D. and Krause, S., Inst of Phys Conf Scr, 100, 557 (1989).Google Scholar
22 Margail, J., La mure, J.M., Pappon, A.M. and Slocmenos, J., Silicon-on-lnsulalor Tech and Devices, ECS Proc. 92–13, 207 (1992).Google Scholar
23 Giles, L.F., Ncjim, A., Marsh, C.D., Hcmmcnl, P.L.F. and Booker, G.R.. 1993 IEEE Intern SOI Conf Proc, pp54-55 (1993).Google Scholar
24 Campisi, G.J., Lambert, R.J., Wilson, R.G. and Vasudcv, P.K., Silicon-on-Insulator Tech and Devices, ECS Proc. 90–6, 278 (1990).Google Scholar
25 Duffy, M.T., Cullcn, G.W., Ipri, A., Jastrzebski, L.J. and Shcdd, W., ibid, p288.Google Scholar
26 Krause, S.J., Lee, J-D., Park, J-C, Roitman, P. and El-Ghoi, M., Silicon-on-Insulator Tech and Devices, ECS Proc. 92–13, 221 (1992).Google Scholar
27 Biersack, J. and Haggmark, L., Nucl. Inst. & Mclh., 174, 257 (1980).Google Scholar