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Self-Assembly Fabrication of High Performance Carbon Nanotubes Based FETs

  • Emmanuel Valentin (a1), Stephane Auvray (a2), Arianna Filoramo (a1), Aline Ribayrol (a1), Marcelo Goffman (a2), Laurence Capes (a1), Jean-Philippe Bourgoin (a2) and Jean-Noel Patillon (a1)...

Abstract

We describe the realization of high quality self-assembled single wall carbon nanotube field effect transistors (CNTFET). A method using self-assembled monolayers (SAMs) is used to obtain high yield selective deposition placement of single wall carbon nanotubes (SWNTs) on predefined regions of a substrate. This is achieved with individual or small bundles of SWNTs and with high densities suitable for fabrication of integrated devices. We show that such positioned SWNTs can be electrically contacted to realize high performance transistors, which very well compare with state-of-the-art CNTFETs. We therefore validate the self-assembly approach to reliably fabricate efficient carbon nanotube based devices.

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Self-Assembly Fabrication of High Performance Carbon Nanotubes Based FETs

  • Emmanuel Valentin (a1), Stephane Auvray (a2), Arianna Filoramo (a1), Aline Ribayrol (a1), Marcelo Goffman (a2), Laurence Capes (a1), Jean-Philippe Bourgoin (a2) and Jean-Noel Patillon (a1)...

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