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Selective Area Laser Induced Deposition of Metal Boride Thin Films

Published online by Cambridge University Press:  10 February 2011

Z.C. Zhong ,
V. Holmes ,
P.A. Dowben  and
D.J. Sellmyer
Z.C. Zhong
Affiliation:
Center for Materials Research and Analysis and Department of Physics and Astronomy, University of Nebraska, Lincoln, NE 68588 - 0111, USA
V. Holmes
Affiliation:
Center for Materials Research and Analysis and Department of Physics and Astronomy, University of Nebraska, Lincoln, NE 68588 - 0111, USA
P.A. Dowben
Affiliation:
Center for Materials Research and Analysis and Department of Physics and Astronomy, University of Nebraska, Lincoln, NE 68588 - 0111, USA
D.J. Sellmyer
Affiliation:
Center for Materials Research and Analysis and Department of Physics and Astronomy, University of Nebraska, Lincoln, NE 68588 - 0111, USA
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Abstract

We have developed a novel technique for the selective area deposition of rare earth hexaborides: laser-induced solution deposition (LISD). This technique is both simple and efficient and combines many advantages of both chemical vapor deposition and electrolytic deposition. The results of LISD deposition show that the polycrystalline thin films of rare earth hexaborides and sub-borides such as MB6, MB4, and MB2 (M = Gd, La) are formed through the light initiated chemical reaction of nido-decaborane (B10H14) and rare earth chloride in solution. These films grow with a strong texture growth axis and morphology that is dependent both on the selection of solvents and laser wavelengths and power used in LISD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 91
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Lafferty, J.M., J. Appl. Phys. 22, 299 (1951).Google Scholar
[2] Swanson, L.W. and Mcneely, D., Surface Sci. 83, 11 (1969).Google Scholar
[3] Oshima, C., Bannai, E., Tanaka, T. and Kawai, S., J. Appl. Phys. 48, 3925 (1977).Google Scholar
[4] Nishitani, R., Aono, M., Tanaka, T., Oshima, C., Kawai, S., Iwasaki, H. and Nakamura, S., Surface Sci. 93, 535 (1980).Google Scholar
[5] Swanson, L.W., Gesley, M.A. and Davis, P.R., Surface Sci. 107, 263 (1981).Google Scholar
[6] Oshima, C., Bannai, E., Tanaka, T. and Kawa, S., Japan. J. Appl. Phys. 16, 965 (1997).Google Scholar
[7] Aono, M., Tanaka, T., Bannai, E. and Kawai, S., Appl. Phys. Letters 31, 323 (1997).Google Scholar
[8] Storms, E. and Mueller, B., J. Phys. Chem. 82, 51 (1978).Google Scholar
[9] Sewell, P.B. and Ramachandran, K.N., in: Scanning Electron Microscopy Vol. I, 221 (1978).Google Scholar
[10] Futamoto, M., Nakazawa, M. and Kawabe, U., Surface Sci., 100, 470 (1980).Google Scholar
[11] Kher, S.S., Tan, Y. and Spencer, J.T., Appl. Organ. Chem., 10, 197 (1996).Google Scholar
[12] Spencer, J.T., U.S. Patent #5,277,932, Jan. 11 th, 1994.Google Scholar
[13] Kher, S. and Spencer, J.T., Chem. Mater., submitted.Google Scholar
[14] Zhang, Z., Kim, Y.-G., Dowben, P.A. and Spencer, J.T., Mat. Res. Symp. Proc., 131, 407 (1989).Google Scholar
[15] Hwang, Seong-Don, Kher, S.S., Spencer, J.T., and Dowben, P.A., in: Chemical Perspectives of Microelectronic Materials III, edited by Abernathy, C.R., Bates, C.W. Jr., Bohling, D.A. and Hobson, W.S., Mat. Res. Soc. Symp. Proc. 282, 185 (1993); Metallized Plastics 4: Fundamental and Applied Aspects, Edited by K.L. Mittal, Marcel Dekker, New York 9 (1997).Google Scholar
[16] Joshi, P.C., Stowell, S. and Desu, S.B., Appl. Phys. Lett. 71, 1341, P.C. Joshi, S.O. Ryo, X. Zhang and S.B. Desu, Appl. Phys. Lett. 70, 1080 (1997).Google Scholar
[17] Cho, C.R., Payne, D.A., and Cho, S.L., Appl. Phys. Lett. 71, 3031 (1997).Google Scholar
[18] Zhong, Z.C., Dowben, P.A. and Sellmyer, D.J., Materials Letters, 37, 320 (1998).Google Scholar
[19] Itoh, H., Tsuzuki, Y., Yogo, T. and Naka, S., Mat. Res. Bull. 22, 1259 (1987).Google Scholar