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A Second-Harmonic Generation Study of GaAs-Oxide Removal Using a Hydrogen Plasma

Published online by Cambridge University Press:  22 February 2011

Takahiro Kimura  and
Chikashi Yamada
Takahiro Kimura
Affiliation:
Optoelectronics Technology Research Laboratory 5-5 Tohkodai, Tsukuba, Ibaraki 300–26, Japan
Chikashi Yamada
Affiliation:
Optoelectronics Technology Research Laboratory 5-5 Tohkodai, Tsukuba, Ibaraki 300–26, Japan
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Abstract

We observed a second-harmonic generation (SHG) in reflection from a GaAs (100) surface during an oxide removal process using a pulsed hydrogen plasma. We found that the P-polarized SH intensity under P-polarized excitation decreased in the [011] azimuth of incidence and increased in the [011] azimuth of incidence during hydrogen plasma irradiation. The input polarization angle dependence of the P-polarized SH intensity before and after oxide removal was fitted to a model which includes both the surface and bulk SHG contributions. We estimated the thickness of the removed oxide based on the bulk SHG contribution change.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 207
Copyright
Copyright © Materials Research Society 1994

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References

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