Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-19T10:27:25.030Z Has data issue: false hasContentIssue false
  • English
  • Français

Schottky Contact Behaviour as a Function of Metal and ZnO Surface Polarity

Published online by Cambridge University Press:  01 February 2011

M.W. Allen ,
P. Miller ,
J.B. Metson ,
R.J. Reeves ,
M.M. Alkaisi  and
S.M. Durbin
M.W. Allen
Affiliation:
martin.allen@elec.canterbury.ac.nz, University of Canterbury, Dept. of Electrical & Computer Eng, Christchurch 8020, New Zealand
P. Miller
Affiliation:
pmi38@student.canterbury.ac.nz, University of Canterbury, Dept. of Physics, Christchurch, 8020, New Zealand
J.B. Metson
Affiliation:
j.metson@auckland.ac.nz, University of Auckland, Dept. of Chemistry, Auckland, New Zealand
R.J. Reeves
Affiliation:
roger.reeves@canterbury.ac.nz, University of Canterbury, Dept. of Physics, Christchurch, 8020, New Zealand
M.M. Alkaisi
Affiliation:
m.alkaisi@elec.canterbury.ac.nz, University of Canterbury, Dept. of Electrical & Computer Eng, Christchurch, 8020, New Zealand
S.M. Durbin
Affiliation:
steven.durbin@canterbury.ac.nz, University of Canterbury, Dept. of Electrical & Computer Eng, Christchurch, 8020, New Zealand
Get access

Abstract

Hall effect, photoluminescence (PL) and Schottky diode measurements were made on the Zn-polar , O-polar and m-plane faces of hydrothermally grown, bulk ZnO. Several polarity related differences were observed in the PL spectra. The most noticeable was increased emission from free excitons and from a triplet of emissions at 3.3725 - 3.3750 eV on the Zn-polar face. Polarity effects were also observed in the properties of highly rectifying, planar, silver oxide diodes fabricated by RF sputtering using an Ag target and an Ar/O2 plasma. The most significant of these was a consistent 130 meV larger barrier height for silver oxide diodes on the Zn-polar face compared to the O-polar face. These polarity effects are thought to result from the internal compensation of bound spontaneous polarization charges at the Zn-polar and O-polar faces. In addition, Au and Ag Schottky diodes with image-force-controlled ideality factors were achieved on the Zn-polar face of bulk ZnO without any special surface treatments.

Keywords

Hall effectelectrical propertiesoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K09-03
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ozgur, U., Alivov, Y.I., Liu, C., Teke, A., Reshchikov, M.A., Dogan, S, Avrutin, V., Cho, S.J. and Morkoc, H., J. Appl. Phys. 98, 041301 (2005).Google Scholar
2. Maeda, K., Sato, M., Niikura, I. and Fukuda, T., Semicond. Sci. Technol. 20, S49 (2005).Google Scholar
3. Bernardini, H.F., Fiorentini, V. and Vanderbilt, D., Phys. Rev. B. 56, R10 024, (1997).Google Scholar
4. Harris, J.J., Lee, K.J., Webb, J.B., Tang, H., Harrison, I., Flannery, L.B., Cheng, T.S. and Foxon, C.T., Semicond. Sci. Technol. 15, 413 (2000).Google Scholar
5. Meyer, B.K., Alves, H., Hofmann, D.M., Kriegseis, W., Forster, D., Bertram, F., Christen, J., Hoffmann, A., Strassburg, M., Dworzak, M., Haboeck, U and Rodina, A.V., Phys. Stat. Sol. (b) 241, 231 (2004).Google Scholar
6. Wagner, M.R., Haboeck, U., McKenna, R., Hoffmann, A., Rodina, A., Lautenschlager, S., Sann, J. and Meyer, B.K., P235, 4th Intl. Workshop on ZnO and Related Materials (2006).Google Scholar
7. Mönch, W., J. Vac. Sci. Technol. B 17(4), 1867 (1999).Google Scholar
8. Allen, M.W., Alkaisi, M.M. and Durbin, S.M., Appl. Phys. Lett. 89, 103520 (2006).Google Scholar
9. Coleman, V.A., Jagadish, C., unpublished.Google Scholar