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Role of Impurities in Reducing Grown-in Dislocations in Compound Semiconductor Crystals

Published online by Cambridge University Press:  03 September 2012

Koji Sumino
Koji Sumino*
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
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Abstract

lmpurity effects on the mobility of dislocations and dislocation generation from generation centers in III - V compound semiconductor crystals are first reviewed on the basis of experimental observations of dynamic behavior of individual dislocations. Dislocation multiplication process is then discussed to account for experimental stress-strain characteristics of these materials obtained in mechanical tests. Using all of such knowledge on dislocation processes in the compound semiconductor crystals, an argument is developed to show how impurities play the role in reducing grown-in dislocations in crystals of these materials. It is shown that immobilization of dislocations caused by impurity gettering plays the decisive role and results in even the growth of dislocation-free crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 87
Copyright
Copyright © Materials Research Society 1992

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References

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