Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-30T17:24:01.314Z Has data issue: false hasContentIssue false
  • English
  • Français

Relaxor Pb(Mgl/3Nb2/3)O3 Thin Films: Processing, Dielectric and Electrostrictive Properties

Published online by Cambridge University Press:  10 February 2011

Z. Kighelman ,
D. Damjanovic ,
A. Seifert ,
S. Gentil ,
S. Hiboux  and
N. Setter
Z. Kighelman
Affiliation:
Ceramics Laboratory, Materials Department, EPFL Swiss Federal Institute of Technology, CH- 1015 Lausanne, Switzerland
D. Damjanovic
Affiliation:
Ceramics Laboratory, Materials Department, EPFL Swiss Federal Institute of Technology, CH- 1015 Lausanne, Switzerland
A. Seifert
Affiliation:
Ceramics Laboratory, Materials Department, EPFL Swiss Federal Institute of Technology, CH- 1015 Lausanne, Switzerland
S. Gentil
Affiliation:
Ceramics Laboratory, Materials Department, EPFL Swiss Federal Institute of Technology, CH- 1015 Lausanne, Switzerland
S. Hiboux
Affiliation:
Ceramics Laboratory, Materials Department, EPFL Swiss Federal Institute of Technology, CH- 1015 Lausanne, Switzerland
N. Setter
Affiliation:
Ceramics Laboratory, Materials Department, EPFL Swiss Federal Institute of Technology, CH- 1015 Lausanne, Switzerland
Get access

Abstract

Lead magnesium niobate, Pb(Mg1/3Nb2/3)O3, thin films were formed from alkoxide-based solution precursors. To obtain stable and reproducible PMN precursor solution, a special effort has been undertaken to optimize the precursor synthesis. The organic decomposition behavior and crystalline phase development in a dried gel powder are reported. The influence of different seeding layers on the microstructures is shown. Dielectric and electromechanical measurements were carried out. Films show relaxor-like behavior, but with dielectric permittivity which is low (4500 at peak) compared to bulk ceramics and single crystals. Several parameters which might be responsible for this lower permittivity are suggested. Large electric dc bias fields (up to 120 kV/cm) can be applied to the films. This dc field reduces the permittivity, suppresses the frequency dispersion and flattens the permittivity peak. The anomaly associated with the field induced transition into a ferroelectric phase was not observed. Electrostrictive strains versus amplitude of electric field were measured and are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 523
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Choi, S. W., Shrout, T. R., Jang, S. J. et al. , Ferroelectrics 100, 29 (1990).Google Scholar
2. Park, S. E. and Shrout, T. R., J. Appl. Phys 82 (4), 1804 (1997).Google Scholar
3. Francis, L. F. and Payne, D. A., J. Am. Ceram. Soc. 74 (12), 3000 (1991).Google Scholar
4. Tantigate, C., Lee, J., and Safari, A., Appl. Phys. Lett 66 (13), 1611 (1995).Google Scholar
5. Kighelman, Z., Damjanovic, D, Seifert, A. et al. , Appl. Phys. Lett 73 (16), 2281 (1998).Google Scholar
6. Boyle, T. J., Alam, T. M., Dimos, D. et al. , Chem. Mat. 9 (12), 3187 (1997).Google Scholar
7. Francis, L. F., Oh, Y. J., and Payne, D. A., J. Mat. Sc. 25, 5007 (1990).Google Scholar
8. Eichorst, D. J, PhD thesis, University of Illinois at Urbana-Champaign, 1991.Google Scholar
9. Chaput, F. and Boilot, J.P, J. Am. Ceram. Soc. 72 (8), 1335 (1989).Google Scholar
10. Kholkin, A. L., Wütchrich, C., Taylor, D V. et al. , Rev. Sci. Instrum. 67(5), 1935 (1996).Google Scholar
11. Shimizu, M., Sugiyama, M., Fujisawa, H. et al. , Jnp J. Appl. Phys. 33 (Part 1, 9B), 5167 (1994).Google Scholar
12. Muralt, P, Maeder, T., Sagalowicz, L. et al. , J. Appl. Phys 83 (7), 3835 (1998).Google Scholar
13. Hiboux, S. and Muralt, P., Ferroelectrics 224, 315 (1999).Google Scholar
14. Taylor, D.V., PhD thesis, EPFL Swiss Federal Institute of Technology, 1999.Google Scholar
15. Butcher, S.J. and Daglish, M., Ferroelectrics Letters 10, 117 (1989).Google Scholar
16. Tagantsev, A. K. and Glazounov, A. E., Phase Transitions 65, 117 (1998).Google Scholar
17. Nomura, S. and Uchino, K., Piezoelectricity, ed. by Taylor, G. W. et al. (Gordon and Breach, Science Publication, New York, 1985), 151.Google Scholar
18. Papet, P., Dougherty, J. P., and Shrout, T. R., J. Mater. Res. 5 (12), 2902 (1990).Google Scholar
19. Sommer, R., Yushin, N. K., and Van der Klink, J. J., Ferroelectrics 127, 235 (1992).Google Scholar
20. Colla, E. V., Yushin, N. K., and Viehland, D., J. Appl. Phys 83 (6), 3298 (1998).Google Scholar
21. Zhang, Q. M., Pan, W. Y., and Cross, L. E., J. Appl. Phys. 63 (8), 2492 (1988).Google Scholar
22. Kighelman, Z., Damjanovic, D., Seifert, A. et al. , Integrated Ferroelectrics 25, 125, (1999)Google Scholar