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Reflectivity Difference Spectra of GaAs and ZnSe (100) Surfaces

Published online by Cambridge University Press:  15 February 2011

C. C. Kim  and
S. Sivananthan
C. C. Kim
Affiliation:
University of Illinois at Chicago, Microphysics Laboratory, Dept. of Physics (m/c 273), 845 W. Taylor St., Chicago IL 60607-7059
S. Sivananthan
Affiliation:
University of Illinois at Chicago, Microphysics Laboratory, Dept. of Physics (m/c 273), 845 W. Taylor St., Chicago IL 60607-7059
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Abstract

Using a photoelastic modulator in the optical-bridge configuration, the reflectivity difference was obtained for GaAs and ZnSe (100) surfaces over the photon energy range from 1.5 eV to 6 eV with various azimuthal orientations of the surface. The RD data of GaAs (100) are similar to previously reported data. The RD data of ZnSe (100) are larger by an order of magnitude than those of GaAs (100), possibly due to the larger ionicity of Zn and Se atoms. The distinctive critical point structures and interference patterns shown in the RD spectra of ZnSe (100) suggest that the data, if obtained in real time, could be used to determine the alloy composition, thickness and temperature during growth. The RD data are analyzed using models proposed by Aspnes. The results indicate that the major contribution to the RD spectra of ZnSe (100) are from the surface local field unlike the RD spectra of GaAs (110), whose major contribution is from the bulk spatial distribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 319
Copyright
Copyright © Materials Research Society 1996

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