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Real-Time XRD Characterization of Growth of Sputtered Tantalum Films

Published online by Cambridge University Press:  01 February 2011

S. L. Lee ,
J. Mueller  and
D. Windover
S. L. Lee*
Affiliation:
US Army Armament Research Development and Engineering Center Benét Labs, Watervliet, NY 12189–4050
J. Mueller
Affiliation:
US Army Armament Research Development and Engineering Center Benét Labs, Watervliet, NY 12189–4050
D. Windover
Affiliation:
US Army Armament Research Development and Engineering Center Benét Labs, Watervliet, NY 12189–4050
*
* Dr. S.L. Lee, 518–266–5503, sabrilee@pica.army.mil
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Abstract

An in-situ DC magnetron sputter deposition system was constructed on the goniometer of an X-ray diffractometer for investigation of thin film nucleation and growth in real time. Tantalum films were deposited on silicon and A723 steel substrates under various deposition conditions. This paper showed: 1) Ta films evolved in single or mixed α-Ta and β-Ta phase on Si and Fe with very different growth characteristics. 2) Crystalline phase was sensitive to deposition mechanics, Ta film changed phase spontaneously without external parameter changes. 3) In pressure range 0.65–13 Pa at 100 watts, phase was not sensitive to pressure variations, but deposition rate and degree of texture decreased at high gas pressure. 4) Depositions using heavier gas showed higher a-Ta concentrations. 5) Reverse sputter cleaning of target and substrate surfaces improved Ta film adhesion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 840: Symposium Q – Neutron and X-Ray Scattering as Probes of Multiscale Phenomena , 2004 , Q3.7
Copyright
Copyright © Materials Research Society 2005

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Footnotes

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Dr. D. Windover is currently a National Research Council Fellow, NIST, Gettysburg, MD

References

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